FGP20N60UFD Datasheet. Specs and Replacement

Type Designator: FGP20N60UFD  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 165 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 17 nS

Coesⓘ - Output Capacitance, typ: 110 pF

Package: TO220

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FGP20N60UFD datasheet

 ..1. Size:740K  fairchild semi
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FGP20N60UFD

October 2008 FGP20N60UFD tm 600V, 20A Field Stop IGBT Features General Description High current capability Using Novel Field Stop IGBT Technology, Fairchild s new series of Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage VCE(sat) =1.8V @ IC = 20A Heating, UPS, SMPS and PFC applications where low conduc- High input impedance tion and s... See More ⇒

 ..2. Size:483K  onsemi
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FGP20N60UFD

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Specs: FGH60N60SFD, FGH60N60SMD, FGH60N60UFD, FGH75N60UF, FGH80N60FD, FGH80N60FD2, FGL35N120FTD, FGL60N100BNTD, FGD4536, FGP5N60LS, FGPF4533, FGPF4536, FGPF4633, FGPF50N33BT, FGY75N60SMD, SGF23N60UF, SGP10N60RUFD

Keywords - FGP20N60UFD transistor spec

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