FGH80N60FD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FGH80N60FD

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 1.8

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 40

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO247

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FGH80N60FD Datasheet (PDF)

0.1. fgh80n60fd2.pdf Size:194K _fairchild_semi

November FGH80N60FD2tm600V, 80A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new ses-ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage: VCE(sat) =1.8V @ IC = 40AInduction Heating applications where low conduction and High input impedanceswitching losses are e

0.2. fgh80n60fd.pdf Size:201K _fairchild_semi

November 2009FGH80N60FDtm600V, 80A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new ses-ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage: VCE(sat) =1.8V @ IC = 40AInduction Heating applications where low conduction and High input impedanceswitching losses ar

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