FGH80N60FD Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FGH80N60FD  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 290 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃

trⓘ - Tiempo de subida, typ: 56 nS

Coesⓘ - Capacitancia de salida, typ: 200 pF

Encapsulados: TO247

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FGH80N60FD datasheet

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FGH80N60FD

November 2009 FGH80N60FD tm 600V, 80A Field Stop IGBT Features General Description High current capability Using Novel Field Stop IGBT Technology, Fairchild s new ses- ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage VCE(sat) =1.8V @ IC = 40A Induction Heating applications where low conduction and High input impedance switching losses ar

 0.1. Size:194K  fairchild semi
 fgh80n60fd2.pdf pdf_icon

FGH80N60FD

November FGH80N60FD2 tm 600V, 80A Field Stop IGBT Features General Description High current capability Using Novel Field Stop IGBT Technology, Fairchild s new ses- ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage VCE(sat) =1.8V @ IC = 40A Induction Heating applications where low conduction and High input impedance switching losses are e

 0.2. Size:404K  onsemi
 fgh80n60fd2.pdf pdf_icon

FGH80N60FD

IGBT - Field Stop 600 V, 40 A FGH80N60FD2 Description Using novel field stop IGBT technology, ON Semiconductor s field stop IGBTs offer the optimum performance for induction heating and www.onsemi.com PFC applications where low conduction and switching losses are essential. VCES IC Features 600 V 40 A High Current Capability Low Saturation Voltage VCE(sat) = 1.8 V (Typ.)

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