FGH80N60FD Datasheet and Replacement
Type Designator: FGH80N60FD
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 290 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 56 nS
Coesⓘ - Output Capacitance, typ: 200 pF
Qgⓘ - Total Gate Charge, typ: 120 nC
Package: TO247
- IGBT Cross-Reference
FGH80N60FD Datasheet (PDF)
fgh80n60fd.pdf

November 2009FGH80N60FDtm600V, 80A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new ses-ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage: VCE(sat) =1.8V @ IC = 40AInduction Heating applications where low conduction and High input impedanceswitching losses ar
fgh80n60fd2.pdf

November FGH80N60FD2tm600V, 80A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new ses-ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage: VCE(sat) =1.8V @ IC = 40AInduction Heating applications where low conduction and High input impedanceswitching losses are e
fgh80n60fd2.pdf

IGBT - Field Stop600 V, 40 AFGH80N60FD2DescriptionUsing novel field stop IGBT technology, ON Semiconductors fieldstop IGBTs offer the optimum performance for induction heating andwww.onsemi.comPFC applications where low conduction and switching losses areessential.VCES ICFeatures600 V 40 A High Current Capability Low Saturation Voltage: VCE(sat) = 1.8 V (Typ.)
Datasheet: FGH40N60UFD , FGH40N65UFD , FGH50N3 , FGH60N60SF , FGH60N60SFD , FGH60N60SMD , FGH60N60UFD , FGH75N60UF , FGD4536 , FGH80N60FD2 , FGL35N120FTD , FGL60N100BNTD , FGP20N60UFD , FGP5N60LS , FGPF4533 , FGPF4536 , FGPF4633 .
History: FGY75N60SMD
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History: FGY75N60SMD



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