FGL35N120FTD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FGL35N120FTD

Polaridad de transistor: N-Channel

Tensión colector-emisor (Vce): 1200

Voltaje de saturación colector-emisor (Vce sat): 1.68

Corriente del colector DC máxima (Ic): 35

Empaquetado / Estuche: TO264

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FGL35N120FTD Datasheet (PDF)

0.1. fgl35n120ftd.pdf Size:727K _fairchild_semi

February 2010FGL35N120FTDtm1200V, 35A Trench IGBTFeatures General Description Field Stop Trench Technology Using advanced field stop trench technology, Fairchilds 1200Vtrench IGBTs offer superior conduction and switching perfor- High Speed Switchingmances, and easy parallel operation with exceptional avalanche Low Saturation Voltage: VCE(sat) = 1.68 V @ IC = 35Ar

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