FGL35N120FTD Datasheet and Replacement
Type Designator: FGL35N120FTD
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 368 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic| ⓘ - Maximum Collector Current: 70 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.68 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 63 nS
Coesⓘ - Output Capacitance, typ: 180 pF
Package: TO264
FGL35N120FTD substitution
FGL35N120FTD Datasheet (PDF)
fgl35n120ftd.pdf
February 2010FGL35N120FTDtm1200V, 35A Trench IGBTFeatures General Description Field Stop Trench Technology Using advanced field stop trench technology, Fairchilds 1200Vtrench IGBTs offer superior conduction and switching perfor- High Speed Switchingmances, and easy parallel operation with exceptional avalanche Low Saturation Voltage: VCE(sat) = 1.68 V @ IC = 35Ar
Datasheet: FGH50N3 , FGH60N60SF , FGH60N60SFD , FGH60N60SMD , FGH60N60UFD , FGH75N60UF , FGH80N60FD , FGH80N60FD2 , FGPF4536 , FGL60N100BNTD , FGP20N60UFD , FGP5N60LS , FGPF4533 , FGPF4536 , FGPF4633 , FGPF50N33BT , FGY75N60SMD .
History: IXGH64N60A3
Keywords - FGL35N120FTD transistor datasheet
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History: IXGH64N60A3
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