FGL35N120FTD IGBT. Datasheet pdf. Equivalent
Type Designator: FGL35N120FTD
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 368
Maximum Collector-Emitter Voltage |Vce|, V: 1200
Maximum Gate-Emitter Voltage |Vge|, V: 25
Maximum Collector Current |Ic| @25℃, A: 70
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.68
Maximum G-E Threshold Voltag |VGE(th)|, V: 7.5
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 63
Collector Capacity (Cc), typ, pF: 180
Total Gate Charge (Qg), typ, nC: 210
Package: TO264
FGL35N120FTD Transistor Equivalent Substitute - IGBT Cross-Reference Search
FGL35N120FTD Datasheet (PDF)
fgl35n120ftd.pdf
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February 2010FGL35N120FTDtm1200V, 35A Trench IGBTFeatures General Description Field Stop Trench Technology Using advanced field stop trench technology, Fairchilds 1200Vtrench IGBTs offer superior conduction and switching perfor- High Speed Switchingmances, and easy parallel operation with exceptional avalanche Low Saturation Voltage: VCE(sat) = 1.68 V @ IC = 35Ar
Datasheet: FGH50N3 , FGH60N60SF , FGH60N60SFD , FGH60N60SMD , FGH60N60UFD , FGH75N60UF , FGH80N60FD , FGH80N60FD2 , FGD4536 , FGL60N100BNTD , FGP20N60UFD , FGP5N60LS , FGPF4533 , FGPF4536 , FGPF4633 , FGPF50N33BT , FGY75N60SMD .
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![FGL35N120FTD](https://alltransistors.com/images/ru.png)
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