All IGBT. FGL35N120FTD Datasheet

 

FGL35N120FTD IGBT. Datasheet pdf. Equivalent

Type Designator: FGL35N120FTD

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 368

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Maximum Gate-Emitter Voltage |Vge|, V: 25

Maximum Collector Current |Ic| @25℃, A: 70

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.68

Maximum G-E Threshold Voltag |VGE(th)|, V: 7.5

Maximum Junction Temperature (Tj), ℃: 150

Rise Time (tr), typ, nS: 63

Collector Capacity (Cc), typ, pF: 180

Total Gate Charge (Qg), typ, nC: 210

Package: TO264

FGL35N120FTD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FGL35N120FTD Datasheet (PDF)

 ..1. Size:727K  fairchild semi
fgl35n120ftd.pdf

FGL35N120FTD
FGL35N120FTD

February 2010FGL35N120FTDtm1200V, 35A Trench IGBTFeatures General Description Field Stop Trench Technology Using advanced field stop trench technology, Fairchilds 1200Vtrench IGBTs offer superior conduction and switching perfor- High Speed Switchingmances, and easy parallel operation with exceptional avalanche Low Saturation Voltage: VCE(sat) = 1.68 V @ IC = 35Ar

Datasheet: FGH50N3 , FGH60N60SF , FGH60N60SFD , FGH60N60SMD , FGH60N60UFD , FGH75N60UF , FGH80N60FD , FGH80N60FD2 , MBQ60T65PES , FGL60N100BNTD , FGP20N60UFD , FGP5N60LS , FGPF4533 , FGPF4536 , FGPF4633 , FGPF50N33BT , FGY75N60SMD .

 

 
Back to Top