FGL35N120FTD IGBT. Datasheet pdf. Equivalent
Type Designator: FGL35N120FTD
Type of IGBT Channel: N-Channel
Maximum Collector-Emitter Voltage |Vce|, V: 1200V
Collector-Emitter saturation Voltage |Vcesat|, V: 1.68V
Maximum Collector Current |Ic|, A: 35.0A
Rise Time, nS: 0
Package: TO264
FGL35N120FTD Transistor Equivalent Substitute - IGBT Cross-Reference Search
FGL35N120FTD PDF doc:
1.1. fgl35n120ftd.pdf 
Size:727K _fairchild_semi
February 2010 FGL35N120FTD tm 1200V, 35A Trench IGBT Features General Description • Field Stop Trench Technology Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching perfor- • High Speed Switching mances, and easy parallel operation with exceptional avalanche • Low Saturation Voltage: VCE(sat) = 1.68 V @ IC = 35A ruggedness.
Datasheet: FGH50N3 , FGH60N60SF , FGH60N60SFD , FGH60N60SMD , FGH60N60UFD , FGH75N60UF , FGH80N60FD , FGH80N60FD2 , RJP30H1DPD , FGL60N100BNTD , FGP20N60UFD , FGP5N60LS , FGPF4533 , FGPF4536 , FGPF4633 , FGPF50N33BT , FGY75N60SMD .
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