All IGBT. FGL35N120FTD Datasheet


FGL35N120FTD IGBT. Datasheet pdf. Equivalent

Type Designator: FGL35N120FTD

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 368

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Maximum Gate-Emitter Voltage |Vge|, V: 25

Maximum Collector Current |Ic| @25℃, A: 70

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.68

Maximum G-E Threshold Voltag |VGE(th)|, V: 7.5

Maximum Junction Temperature (Tj), ℃: 150

Rise Time (tr), typ, nS: 63

Collector Capacity (Cc), typ, pF: 180

Total Gate Charge (Qg), typ, nC: 210

Package: TO264

FGL35N120FTD Transistor Equivalent Substitute - IGBT Cross-Reference Search


FGL35N120FTD Datasheet (PDF)

 ..1. Size:727K  fairchild semi


February 2010FGL35N120FTDtm1200V, 35A Trench IGBTFeatures General Description Field Stop Trench Technology Using advanced field stop trench technology, Fairchilds 1200Vtrench IGBTs offer superior conduction and switching perfor- High Speed Switchingmances, and easy parallel operation with exceptional avalanche Low Saturation Voltage: VCE(sat) = 1.68 V @ IC = 35Ar

Datasheet: FGH50N3 , FGH60N60SF , FGH60N60SFD , FGH60N60SMD , FGH60N60UFD , FGH75N60UF , FGH80N60FD , FGH80N60FD2 , MBQ60T65PES , FGL60N100BNTD , FGP20N60UFD , FGP5N60LS , FGPF4533 , FGPF4536 , FGPF4633 , FGPF50N33BT , FGY75N60SMD .


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