FGL60N100BNTD Todos los transistores

 

FGL60N100BNTD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FGL60N100BNTD
   Tipo de transistor: IGBT + Diode
   Código de marcado: G60N100BNTD
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 180 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1000 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 25 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 320 nS
   Coesⓘ - Capacitancia de salida, typ: 260 pF
   Qgⓘ - Carga total de la puerta, typ: 275 nC
   Paquete / Cubierta: TO264
 

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FGL60N100BNTD Datasheet (PDF)

 ..1. Size:520K  fairchild semi
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FGL60N100BNTD

IGBTFGL60N100BNTDNPT-Trench IGBTGeneral Description FeaturesTrench insulated gate bipolar transistors (IGBTs) with NPT High Speed Switchingtechnology show outstanding performance in conduction Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60Aand switching characteristics as well as enhanced High Input Impedanceavalanche ruggedness. These devices are well suited for

 ..2. Size:508K  onsemi
 fgl60n100bntd.pdf pdf_icon

FGL60N100BNTD

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... FGH60N60SF , FGH60N60SFD , FGH60N60SMD , FGH60N60UFD , FGH75N60UF , FGH80N60FD , FGH80N60FD2 , FGL35N120FTD , RJP30H2A , FGP20N60UFD , FGP5N60LS , FGPF4533 , FGPF4536 , FGPF4633 , FGPF50N33BT , FGY75N60SMD , SGF23N60UF .

 

 
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