FGL60N100BNTD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGL60N100BNTD
Tipo de transistor: IGBT
Código de marcado: G60N100BNTD
Polaridad de transistor: N-Channel
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 180
Tensión máxima colector-emisor |Vce|, V: 1000
Tensión máxima puerta-emisor |Vge|, V: 25
Colector de Corriente Continua a 25℃ |Ic|, A: 60
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.9
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 320
Capacitancia de salida (Cc), typ, pF: 260
Paquete / Cubierta: TO264
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FGL60N100BNTD Datasheet (PDF)
fgl60n100bntd.pdf
IGBTFGL60N100BNTDNPT-Trench IGBTGeneral Description FeaturesTrench insulated gate bipolar transistors (IGBTs) with NPT High Speed Switchingtechnology show outstanding performance in conduction Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60Aand switching characteristics as well as enhanced High Input Impedanceavalanche ruggedness. These devices are well suited for
fgl60n100bntd.pdf
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Otros transistores... FGH60N60SF , FGH60N60SFD , FGH60N60SMD , FGH60N60UFD , FGH75N60UF , FGH80N60FD , FGH80N60FD2 , FGL35N120FTD , FGH60N60SMD , FGP20N60UFD , FGP5N60LS , FGPF4533 , FGPF4536 , FGPF4633 , FGPF50N33BT , FGY75N60SMD , SGF23N60UF .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JNG8T60FT1 | JNG80T60LS | JNG75T65HYU2 | JNG75T65HXU1 | JNG75T120QZU1 | JNG75T120QS1 | JNG75T120LS | JNG60T60HS | JNG5T65DS1 | JNG50N120QS1 | JNG50N120QFU1