FGL60N100BNTD IGBT. Datasheet pdf. Equivalent
Type Designator: FGL60N100BNTD
Marking Code: G60N100BNTD
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 180
Maximum Collector-Emitter Voltage |Vce|, V: 1000
Collector-Emitter saturation Voltage |Vcesat|, V: 2.9
Maximum Gate-Emitter Voltage |Veg|, V: 25
Maximum Collector Current |Ic|, A: 60
Maximum Junction Temperature (Tj), °C: 150
Rise Time, nS: 320
Maximum Collector Capacity (Cc), pF: 260
Package: TO264
FGL60N100BNTD Transistor Equivalent Substitute - IGBT Cross-Reference Search
FGL60N100BNTD Datasheet (PDF)
0.1. fgl60n100bntd.pdf Size:520K _fairchild_semi
IGBTFGL60N100BNTDNPT-Trench IGBTGeneral Description FeaturesTrench insulated gate bipolar transistors (IGBTs) with NPT High Speed Switchingtechnology show outstanding performance in conduction Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60Aand switching characteristics as well as enhanced High Input Impedanceavalanche ruggedness. These devices are well suited for
Datasheet: FGH60N60SF , FGH60N60SFD , FGH60N60SMD , FGH60N60UFD , FGH75N60UF , FGH80N60FD , FGH80N60FD2 , FGL35N120FTD , IKW50N60H3 , FGP20N60UFD , FGP5N60LS , FGPF4533 , FGPF4536 , FGPF4633 , FGPF50N33BT , FGY75N60SMD , SGF23N60UF .



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