All IGBT. FGL60N100BNTD Datasheet

 

FGL60N100BNTD Datasheet and Replacement


   Type Designator: FGL60N100BNTD
   Type: IGBT + Anti-Parallel Diode
   Marking Code: G60N100BNTD
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 180 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 320 nS
   Coesⓘ - Output Capacitance, typ: 260 pF
   Qg ⓘ - Total Gate Charge, typ: 275 nC
   Package: TO264
 

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FGL60N100BNTD Datasheet (PDF)

 ..1. Size:520K  fairchild semi
 fgl60n100bntd.pdf pdf_icon

FGL60N100BNTD

IGBTFGL60N100BNTDNPT-Trench IGBTGeneral Description FeaturesTrench insulated gate bipolar transistors (IGBTs) with NPT High Speed Switchingtechnology show outstanding performance in conduction Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60Aand switching characteristics as well as enhanced High Input Impedanceavalanche ruggedness. These devices are well suited for

 ..2. Size:508K  onsemi
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FGL60N100BNTD

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: FGH60N60SF , FGH60N60SFD , FGH60N60SMD , FGH60N60UFD , FGH75N60UF , FGH80N60FD , FGH80N60FD2 , FGL35N120FTD , RJP30H2A , FGP20N60UFD , FGP5N60LS , FGPF4533 , FGPF4536 , FGPF4633 , FGPF50N33BT , FGY75N60SMD , SGF23N60UF .

Keywords - FGL60N100BNTD transistor datasheet

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