All IGBT. FGL60N100BNTD Datasheet

 

FGL60N100BNTD IGBT. Datasheet pdf. Equivalent

Type Designator: FGL60N100BNTD

Marking Code: G60N100BNTD

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 180

Maximum Collector-Emitter Voltage |Vce|, V: 1000

Collector-Emitter saturation Voltage |Vcesat|, V: 2.9

Maximum Gate-Emitter Voltage |Veg|, V: 25

Maximum Collector Current |Ic|, A: 60

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 320

Maximum Collector Capacity (Cc), pF: 260

Package: TO264

FGL60N100BNTD Transistor Equivalent Substitute - IGBT Cross-Reference Search

FGL60N100BNTD IGBT. Datasheet pdf. Equivalent

Type Designator: FGL60N100BNTD

Marking Code: G60N100BNTD

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 180

Maximum Collector-Emitter Voltage |Vce|, V: 1000

Collector-Emitter saturation Voltage |Vcesat|, V: 2.9

Maximum Gate-Emitter Voltage |Veg|, V: 25

Maximum Collector Current |Ic|, A: 60

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 320

Maximum Collector Capacity (Cc), pF: 260

Package: TO264

FGL60N100BNTD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FGL60N100BNTD Datasheet (PDF)

0.1. fgl60n100bntd.pdf Size:520K _fairchild_semi

FGL60N100BNTD
FGL60N100BNTD

IGBT FGL60N100BNTD NPT-Trench IGBT General Description Features Trench insulated gate bipolar transistors (IGBTs) with NPT • High Speed Switching technology show outstanding performance in conduction • Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A and switching characteristics as well as enhanced • High Input Impedance avalanche ruggedness. These devices are well suited for

Datasheet: FGH60N60SF , FGH60N60SFD , FGH60N60SMD , FGH60N60UFD , FGH75N60UF , FGH80N60FD , FGH80N60FD2 , FGL35N120FTD , IKW50N60H3 , FGP20N60UFD , FGP5N60LS , FGPF4533 , FGPF4536 , FGPF4633 , FGPF50N33BT , FGY75N60SMD , SGF23N60UF .

 

 
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