FGL60N100BNTD Datasheet. Specs and Replacement

Type Designator: FGL60N100BNTD  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 180 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃

tr ⓘ - Rise Time, typ: 320 nS

Coesⓘ - Output Capacitance, typ: 260 pF

Package: TO264

  📄📄 Copy 

 FGL60N100BNTD Substitution

- IGBTⓘ Cross-Reference Search

 

FGL60N100BNTD datasheet

 ..1. Size:520K  fairchild semi
 fgl60n100bntd.pdf pdf_icon

FGL60N100BNTD

IGBT FGL60N100BNTD NPT-Trench IGBT General Description Features Trench insulated gate bipolar transistors (IGBTs) with NPT High Speed Switching technology show outstanding performance in conduction Low Saturation Voltage VCE(sat) = 2.5 V @ IC = 60A and switching characteristics as well as enhanced High Input Impedance avalanche ruggedness. These devices are well suited for... See More ⇒

 ..2. Size:508K  onsemi
 fgl60n100bntd.pdf pdf_icon

FGL60N100BNTD

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Specs: FGH60N60SF, FGH60N60SFD, FGH60N60SMD, FGH60N60UFD, FGH75N60UF, FGH80N60FD, FGH80N60FD2, FGL35N120FTD, IXGH60N60, FGP20N60UFD, FGP5N60LS, FGPF4533, FGPF4536, FGPF4633, FGPF50N33BT, FGY75N60SMD, SGF23N60UF

Keywords - FGL60N100BNTD transistor spec

 FGL60N100BNTD cross reference
 FGL60N100BNTD equivalent finder
 FGL60N100BNTD lookup
 FGL60N100BNTD substitution
 FGL60N100BNTD replacement