FGL60N100BNTD IGBT. Datasheet pdf. Equivalent
Type Designator: FGL60N100BNTD
Type: IGBT + Anti-Parallel Diode
Marking Code: G60N100BNTD
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 180
Maximum Collector-Emitter Voltage |Vce|, V: 1000
Maximum Gate-Emitter Voltage |Vge|, V: 25
Maximum Collector Current |Ic| @25℃, A: 60
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.5
Maximum G-E Threshold Voltag |VGE(th)|, V: 7
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 320
Collector Capacity (Cc), typ, pF: 260
Total Gate Charge (Qg), typ, nC: 275
Package: TO264
FGL60N100BNTD Transistor Equivalent Substitute - IGBT Cross-Reference Search
FGL60N100BNTD Datasheet (PDF)
fgl60n100bntd.pdf
IGBTFGL60N100BNTDNPT-Trench IGBTGeneral Description FeaturesTrench insulated gate bipolar transistors (IGBTs) with NPT High Speed Switchingtechnology show outstanding performance in conduction Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60Aand switching characteristics as well as enhanced High Input Impedanceavalanche ruggedness. These devices are well suited for
fgl60n100bntd.pdf
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Datasheet: FGH60N60SF , FGH60N60SFD , FGH60N60SMD , FGH60N60UFD , FGH75N60UF , FGH80N60FD , FGH80N60FD2 , FGL35N120FTD , MBQ60T65PES , FGP20N60UFD , FGP5N60LS , FGPF4533 , FGPF4536 , FGPF4633 , FGPF50N33BT , FGY75N60SMD , SGF23N60UF .
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IGBT: TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ | TT060U065FB | TT060U060EQ | TT050U065FBC | TT050U065FB | TT050K065FQ