FGH50N3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FGH50N3

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 300

Voltaje de saturación colector-emisor (Vce sat): 1.3

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 75

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO247

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FGH50N3 Datasheet (PDF)

1.1. fgh50n3.pdf Size:183K _fairchild_semi

July 2002 FGH50N3 300V, PT N-Channel IGBT General Description Features The FGH50N3 is a MOS gated high voltage switching • Low VCE(SAT) . . . . . . . . . . . . . . . . . . . < 1.4V max device combining the best features of MOSFETs and • Low EOFF . . . . . . . . . . . . . . . . . . . . . . . . . < 200µJ bipolar transistors. These devices have the high input impedance of a MOSFET an

4.1. fgh50n6s2d.pdf Size:195K _fairchild_semi

July 2002 FGH50N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description Features The FGH50N6S2D is a Low Gate Charge, Low Plateau • 100kHz Operation at 390V, 40A Voltage SMPS II IGBT combining the fast switching speed • 200kHZ Operation at 390V, 25A of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS)

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