FGH50N3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGH50N3
Polaridad de transistor: N-Channel
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc):
Tensión colector-emisor (Vce): 300
Voltaje de saturación colector-emisor (Vce sat): 1.3
Tensión emisor-compuerta (Veg):
Corriente del colector DC máxima (Ic): 75
Temperatura operativa máxima (Tj), °C:
Tiempo de elevación:
Capacitancia de salida (Cc), pF:
Empaquetado / Estuche: TO247
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FGH50N3 Datasheet (PDF)
1.1. fgh50n3.pdf Size:183K _fairchild_semi
July 2002 FGH50N3 300V, PT N-Channel IGBT General Description Features The FGH50N3 is a MOS gated high voltage switching • Low VCE(SAT) . . . . . . . . . . . . . . . . . . . < 1.4V max device combining the best features of MOSFETs and • Low EOFF . . . . . . . . . . . . . . . . . . . . . . . . . < 200µJ bipolar transistors. These devices have the high input impedance of a MOSFET an
4.1. fgh50n6s2d.pdf Size:195K _fairchild_semi
July 2002 FGH50N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description Features The FGH50N6S2D is a Low Gate Charge, Low Plateau • 100kHz Operation at 390V, 40A Voltage SMPS II IGBT combining the fast switching speed • 200kHZ Operation at 390V, 25A of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS)
Otros transistores... FGH30N60LSD , FGH40N60SF , FGH40N60SFD , FGH40N60SMD , FGH40N60SMDF , FGH40N60UF , FGH40N60UFD , FGH40N65UFD , IRGP4086 , FGH60N60SF , FGH60N60SFD , FGH60N60SMD , FGH60N60UFD , FGH75N60UF , FGH80N60FD , FGH80N60FD2 , FGL35N120FTD .



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