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FGH50N3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FGH50N3

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 300V

Voltaje de saturación colector-emisor (Vce sat): 1.3V

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 75.0A

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO247

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FGH50N3 Datasheet (PDF)

1.1. fgh50n3.pdf Size:183K _fairchild_semi

FGH50N3
FGH50N3

July 2002 FGH50N3 300V, PT N-Channel IGBT General Description Features The FGH50N3 is a MOS gated high voltage switching Low VCE(SAT) . . . . . . . . . . . . . . . . . . . < 1.4V max device combining the best features of MOSFETs and Low EOFF . . . . . . . . . . . . . . . . . . . . . . . . . < 200J bipolar transistors. These devices have the high input impedance of a MOSFET and the lo

4.1. fgh50n6s2d.pdf Size:195K _fairchild_semi

FGH50N3
FGH50N3

July 2002 FGH50N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description Features The FGH50N6S2D is a Low Gate Charge, Low Plateau 100kHz Operation at 390V, 40A Voltage SMPS II IGBT combining the fast switching speed 200kHZ Operation at 390V, 25A of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS). These

Otros transistores... FGH30N60LSD , FGH40N60SF , FGH40N60SFD , FGH40N60SMD , FGH40N60SMDF , FGH40N60UF , FGH40N60UFD , FGH40N65UFD , IRGP4086 , FGH60N60SF , FGH60N60SFD , FGH60N60SMD , FGH60N60UFD , FGH75N60UF , FGH80N60FD , FGH80N60FD2 , FGL35N120FTD .

 


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Introduzca al menos 1 números o letras