FGH50N3 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: FGH50N3
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 463 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 300 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 75 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.3 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5.5 V
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 15 nS
Qgⓘ - Общий заряд затвора, typ: 180 nC
Тип корпуса: TO247
FGH50N3 Datasheet (PDF)
fgh50n3.pdf
July 2002FGH50N3300V, PT N-Channel IGBTGeneral Description FeaturesThe FGH50N3 is a MOS gated high voltage switching Low VCE(SAT) . . . . . . . . . . . . . . . . . . .
fgh50n3.pdf
IGBT - SMPS 300 VFGH50N3DescriptionUsing ON Semiconductors planar technology, this IGBT is idealfor many high voltage switching applications operating at highwww.onsemi.comfrequencies where low conduction losses are essential. This device hasbeen optimized for medium frequency switch mode power supplies.FeaturesC Low Saturation Voltage: VCE(sat) = 1.4 V Max Low
fgh50n6s2d.pdf
IGBT - SMPS II SeriesN-Channel withAnti-Parallel Stealth Diode600 VFGH50N6S2Dwww.onsemi.comDescriptionThe FGH50N6S2D is a Low Gate Charge, Low Plateau VoltageSMPS II IGBT combining the fast switching speed of the SMPSCIGBTs along with lower gate charge, plateau voltage and avalanchecapability (UIS). These LGC devices shorten delay times, and reducethe power requirement o
fgh50n6s2d.pdf
July 2002FGH50N6S2D600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM DiodeGeneral Description FeaturesThe FGH50N6S2D is a Low Gate Charge, Low Plateau 100kHz Operation at 390V, 40AVoltage SMPS II IGBT combining the fast switching speed 200kHZ Operation at 390V, 25Aof the SMPS IGBTs along with lower gate charge, plateauvoltage and avalanche capability (UIS)
fgh50t65sqd.pdf
April 2016FGH50T65SQD650 V, 50 A Field Stop Trench IGBTFeatures General Description Maximum Junction Temperature : TJ =175oC Using novel field stop IGBT technology, Fairchilds new series offield stop 4th generation IGBTs offer the optimum performance Positive Temperaure Co-efficient for Easy Parallel Operatingfor solar inverter, UPS, welder, telecom, ESS and PFC applica-
fgh50t65upd.pdf
IGBT - Field Stop, Trench650 V, 50 AFGH50T65UPDDescriptionUsing innovative field stop trench IGBT technology,ON Semiconductors new series of field-stop trench IGBTs offerwww.onsemi.comoptimum performance for solar inverter, UPS, welder, and digitalpower generator where low conduction and switching losses areCessential.Features Maximum Junction Temperature: TJ = 175
fgh50t65sqd.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Другие IGBT... FGH30N60LSD , FGH40N60SF , FGH40N60SFD , FGH40N60SMD , FGH40N60SMDF , FGH40N60UF , FGH40N60UFD , FGH40N65UFD , GT30F124 , FGH60N60SF , FGH60N60SFD , FGH60N60SMD , FGH60N60UFD , FGH75N60UF , FGH80N60FD , FGH80N60FD2 , FGL35N120FTD .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2