Справочник IGBT. FGH50N3

 

FGH50N3 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: FGH50N3
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 463 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 300 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 75 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.3 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 15 nS
   Тип корпуса: TO247
     - подбор IGBT транзистора по параметрам

 

 

FGH50N3 Datasheet (PDF)

 ..1. Size:183K  fairchild semi
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FGH50N3
FGH50N3

July 2002FGH50N3300V, PT N-Channel IGBTGeneral Description FeaturesThe FGH50N3 is a MOS gated high voltage switching Low VCE(SAT) . . . . . . . . . . . . . . . . . . .

 ..2. Size:348K  onsemi
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FGH50N3
FGH50N3

IGBT - SMPS 300 VFGH50N3DescriptionUsing ON Semiconductors planar technology, this IGBT is idealfor many high voltage switching applications operating at highwww.onsemi.comfrequencies where low conduction losses are essential. This device hasbeen optimized for medium frequency switch mode power supplies.FeaturesC Low Saturation Voltage: VCE(sat) = 1.4 V Max Low

 8.1. Size:396K  1
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FGH50N3
FGH50N3

IGBT - SMPS II SeriesN-Channel withAnti-Parallel Stealth Diode600 VFGH50N6S2Dwww.onsemi.comDescriptionThe FGH50N6S2D is a Low Gate Charge, Low Plateau VoltageSMPS II IGBT combining the fast switching speed of the SMPSCIGBTs along with lower gate charge, plateau voltage and avalanchecapability (UIS). These LGC devices shorten delay times, and reducethe power requirement o

 8.2. Size:195K  fairchild semi
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FGH50N3
FGH50N3

July 2002FGH50N6S2D600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM DiodeGeneral Description FeaturesThe FGH50N6S2D is a Low Gate Charge, Low Plateau 100kHz Operation at 390V, 40AVoltage SMPS II IGBT combining the fast switching speed 200kHZ Operation at 390V, 25Aof the SMPS IGBTs along with lower gate charge, plateauvoltage and avalanche capability (UIS)

Другие IGBT... FGH30N60LSD , FGH40N60SF , FGH40N60SFD , FGH40N60SMD , FGH40N60SMDF , FGH40N60UF , FGH40N60UFD , FGH40N65UFD , GT30F124 , FGH60N60SF , FGH60N60SFD , FGH60N60SMD , FGH60N60UFD , FGH75N60UF , FGH80N60FD , FGH80N60FD2 , FGL35N120FTD .

 

 
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