All IGBT. FGH50N3 Datasheet

 

FGH50N3 IGBT. Datasheet pdf. Equivalent


   Type Designator: FGH50N3
   Type: IGBT
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 463
   Maximum Collector-Emitter Voltage |Vce|, V: 300
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 75
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.3
   Maximum G-E Threshold Voltag |VGE(th)|, V: 5.5
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 15
   Total Gate Charge (Qg), typ, nC: 180
   Package: TO247

 FGH50N3 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FGH50N3 Datasheet (PDF)

 ..1. Size:183K  fairchild semi
fgh50n3.pdf

FGH50N3
FGH50N3

July 2002FGH50N3300V, PT N-Channel IGBTGeneral Description FeaturesThe FGH50N3 is a MOS gated high voltage switching Low VCE(SAT) . . . . . . . . . . . . . . . . . . .

 ..2. Size:348K  onsemi
fgh50n3.pdf

FGH50N3
FGH50N3

IGBT - SMPS 300 VFGH50N3DescriptionUsing ON Semiconductors planar technology, this IGBT is idealfor many high voltage switching applications operating at highwww.onsemi.comfrequencies where low conduction losses are essential. This device hasbeen optimized for medium frequency switch mode power supplies.FeaturesC Low Saturation Voltage: VCE(sat) = 1.4 V Max Low

 8.1. Size:396K  1
fgh50n6s2d.pdf

FGH50N3
FGH50N3

IGBT - SMPS II SeriesN-Channel withAnti-Parallel Stealth Diode600 VFGH50N6S2Dwww.onsemi.comDescriptionThe FGH50N6S2D is a Low Gate Charge, Low Plateau VoltageSMPS II IGBT combining the fast switching speed of the SMPSCIGBTs along with lower gate charge, plateau voltage and avalanchecapability (UIS). These LGC devices shorten delay times, and reducethe power requirement o

 8.2. Size:195K  fairchild semi
fgh50n6s2d.pdf

FGH50N3
FGH50N3

July 2002FGH50N6S2D600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM DiodeGeneral Description FeaturesThe FGH50N6S2D is a Low Gate Charge, Low Plateau 100kHz Operation at 390V, 40AVoltage SMPS II IGBT combining the fast switching speed 200kHZ Operation at 390V, 25Aof the SMPS IGBTs along with lower gate charge, plateauvoltage and avalanche capability (UIS)

 9.1. Size:949K  1
fgh50t65sqd.pdf

FGH50N3
FGH50N3

April 2016FGH50T65SQD650 V, 50 A Field Stop Trench IGBTFeatures General Description Maximum Junction Temperature : TJ =175oC Using novel field stop IGBT technology, Fairchilds new series offield stop 4th generation IGBTs offer the optimum performance Positive Temperaure Co-efficient for Easy Parallel Operatingfor solar inverter, UPS, welder, telecom, ESS and PFC applica-

 9.2. Size:466K  onsemi
fgh50t65upd.pdf

FGH50N3
FGH50N3

IGBT - Field Stop, Trench650 V, 50 AFGH50T65UPDDescriptionUsing innovative field stop trench IGBT technology,ON Semiconductors new series of field-stop trench IGBTs offerwww.onsemi.comoptimum performance for solar inverter, UPS, welder, and digitalpower generator where low conduction and switching losses areCessential.Features Maximum Junction Temperature: TJ = 175

 9.3. Size:1050K  onsemi
fgh50t65sqd.pdf

FGH50N3
FGH50N3

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: FGH30N60LSD , FGH40N60SF , FGH40N60SFD , FGH40N60SMD , FGH40N60SMDF , FGH40N60UF , FGH40N60UFD , FGH40N65UFD , RJP63K2DPP-M0 , FGH60N60SF , FGH60N60SFD , FGH60N60SMD , FGH60N60UFD , FGH75N60UF , FGH80N60FD , FGH80N60FD2 , FGL35N120FTD .

 

 
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