All IGBT. FGH50N3 Equivalents Search

 

FGH50N3 Specs and Replacement


   Type Designator: FGH50N3
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 463 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 300 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.3 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 15 nS
   Package: TO247
 

 FGH50N3 Substitution

   - IGBT ⓘ Cross-Reference Search

 

FGH50N3 specs

 ..1. Size:183K  fairchild semi
fgh50n3.pdf pdf_icon

FGH50N3

July 2002 FGH50N3 300V, PT N-Channel IGBT General Description Features The FGH50N3 is a MOS gated high voltage switching Low VCE(SAT) . . . . . . . . . . . . . . . . . . . ... See More ⇒

 ..2. Size:348K  onsemi
fgh50n3.pdf pdf_icon

FGH50N3

IGBT - SMPS 300 V FGH50N3 Description Using ON Semiconductor s planar technology, this IGBT is ideal for many high voltage switching applications operating at high www.onsemi.com frequencies where low conduction losses are essential. This device has been optimized for medium frequency switch mode power supplies. Features C Low Saturation Voltage VCE(sat) = 1.4 V Max Low ... See More ⇒

 8.1. Size:396K  1
fgh50n6s2d.pdf pdf_icon

FGH50N3

IGBT - SMPS II Series N-Channel with Anti-Parallel Stealth Diode 600 V FGH50N6S2D www.onsemi.com Description The FGH50N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS C IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement o... See More ⇒

 8.2. Size:195K  fairchild semi
fgh50n6s2d.pdf pdf_icon

FGH50N3

July 2002 FGH50N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description Features The FGH50N6S2D is a Low Gate Charge, Low Plateau 100kHz Operation at 390V, 40A Voltage SMPS II IGBT combining the fast switching speed 200kHZ Operation at 390V, 25A of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS)... See More ⇒

Specs: FGH30N60LSD , FGH40N60SF , FGH40N60SFD , FGH40N60SMD , FGH40N60SMDF , FGH40N60UF , FGH40N60UFD , FGH40N65UFD , GT30F124 , FGH60N60SF , FGH60N60SFD , FGH60N60SMD , FGH60N60UFD , FGH75N60UF , FGH80N60FD , FGH80N60FD2 , FGL35N120FTD .

Keywords - FGH50N3 transistor spec

 FGH50N3 cross reference
 FGH50N3 equivalent finder
 FGH50N3 lookup
 FGH50N3 substitution
 FGH50N3 replacement

 

 
Back to Top

 


 
.