CM75DY-28H IGBT. Datasheet pdf. Equivalent
Type Designator: CM75DY-28H
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 600 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 75 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.1 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 350(max) nS
Coesⓘ - Output Capacitance, typ: 5.3(max) pF
Qgⓘ - Total Gate Charge, typ: 383 nC
Package: MODULE
CM75DY-28H Transistor Equivalent Substitute - IGBT Cross-Reference Search
CM75DY-28H Datasheet (PDF)
cm75dy-28h.pdf
CM75DY-28HPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Dual IGBTMODH-Series Module75 Amperes/1400 VoltsABCF F KQ - DIA.(2 TYP.)M JDC2E1 E2 C1RNS - M5 THDDescription:(3 TYP.) (3 TYP.)Powerex IGBTMOD ModulesRare designed for use in switchingR.110 TABapplications. Each module consistsH L Hof two IGBT Tr
cm75du-24f.pdf
CM75DU-24FPowerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignDual IGBTMOD75 Amperes/1200 VoltsAN DP - NUTS (3 TYP)TC MEASURED POINTYEC2E1 E2 C1WQ (2FPLACES)X GBFDescription:Powerex IGBTMOD Modules M K K Jare designed for use in switching Rapplications. Each module con-H (4PLACES)sist
cm75du-12f.pdf
CM75DU-12FPowerex, Inc., 200 E.Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignDual IGBTMOD75 Amperes/600 VoltsAN DP - NUTS (3 TYP)TC MEASURED POINTYEC2E1 E2 C1WQ (2FPLACES)X GBFDescription:Powerex IGBTMOD Modules M K K Jare designed for use in switching Rapplications. Each module con-H (4PLACES)sists
Datasheet: IGC142T120T6RL , IGC142T120T6RM , IGC28T65T8M , IGC28T65QE , BUK854-800A , BUK856-400IZ , BUK856-800A , BUK866-400IZ , IKW75N60T , CT15SM-24 , CT20AS-8 , CT20ASJ-8 , CT20ASL-8 , CT20TM-8 , CT20VM-8 , CT20VML-8 , CT20VS-8 .
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