NGB8204N PDF and Equivalents Search

 

NGB8204N PDF Specs and Replacement


   Type Designator: NGB8204N
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 115 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 18 V
   |Ic| ⓘ - Maximum Collector Current: 18 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃
   Coesⓘ - Output Capacitance, typ: 75 pF
   Package: D2PAK
 

 NGB8204N Substitution

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NGB8204N PDF specs

 ..1. Size:126K  1
ngb8204n ngb8204an.pdf pdf_icon

NGB8204N

NGB8204N, NGB8204AN Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features http //onsemi.com monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses 18 AMPS, 400 VOLTS include Ignition, Direct Fuel Injection, or wherever high voltage and VCE(on) 3 2... See More ⇒

 7.1. Size:126K  onsemi
ngb8204a.pdf pdf_icon

NGB8204N

NGB8204N, NGB8204AN Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features http //onsemi.com monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses 18 AMPS, 400 VOLTS include Ignition, Direct Fuel Injection, or wherever high voltage and VCE(on) 3 2... See More ⇒

 8.1. Size:130K  1
ngb8207n ngb8207bn.pdf pdf_icon

NGB8204N

NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2... See More ⇒

 8.2. Size:123K  1
ngb8202n ngb8202an.pdf pdf_icon

NGB8204N

NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2... See More ⇒

Specs: FGY75N60SMD , SGF23N60UF , SGP10N60RUFD , SGS5N150UF , NGB15N41CL , NGB18N40CLB , NGB8202AN , NGB8202N , IHW20N120R3 , NGB8206AN , NGB8206N , NGB8207AN , NGB8207N , NGD15N41CL , NGD18N40CLB , NGD8201A , NGD8201N .

Keywords - NGB8204N transistor spec

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