NGB8204N - аналоги и описание IGBT

 

Аналоги NGB8204N. Основные параметры


   Наименование: NGB8204N
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pc ⓘ - Максимальная рассеиваемая мощность: 115 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 400 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 18 V
   |Ic| ⓘ - Максимальный постоянный ток коллектора: 18 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.4 V @25℃
   Tj ⓘ - Максимальная температура перехода: 175 ℃
   Coesⓘ - Выходная емкость, типовая: 75 pF
   Тип корпуса: D2PAK
 

 Аналог (замена) для NGB8204N

   - подбор ⓘ IGBT транзистора по параметрам

 

NGB8204N даташит

 ..1. Size:126K  1
ngb8204n ngb8204an.pdfpdf_icon

NGB8204N

NGB8204N, NGB8204AN Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features http //onsemi.com monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses 18 AMPS, 400 VOLTS include Ignition, Direct Fuel Injection, or wherever high voltage and VCE(on) 3 2

 7.1. Size:126K  onsemi
ngb8204a.pdfpdf_icon

NGB8204N

NGB8204N, NGB8204AN Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features http //onsemi.com monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses 18 AMPS, 400 VOLTS include Ignition, Direct Fuel Injection, or wherever high voltage and VCE(on) 3 2

 8.1. Size:130K  1
ngb8207n ngb8207bn.pdfpdf_icon

NGB8204N

NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2

 8.2. Size:123K  1
ngb8202n ngb8202an.pdfpdf_icon

NGB8204N

NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2

Другие IGBT... FGY75N60SMD , SGF23N60UF , SGP10N60RUFD , SGS5N150UF , NGB15N41CL , NGB18N40CLB , NGB8202AN , NGB8202N , IHW20N120R3 , NGB8206AN , NGB8206N , NGB8207AN , NGB8207N , NGD15N41CL , NGD18N40CLB , NGD8201A , NGD8201N .

 

 
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