NGP15N41CL Datasheet and Replacement
Type Designator: NGP15N41CL
Type: IGBT + Built-in Zener Diodes
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 107 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 440 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 15 V
|Ic| ⓘ - Maximum Collector Current: 15 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 1.9 V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 4000 nS
Coesⓘ - Output Capacitance, typ: 55 pF
Package: TO220
NGP15N41CL substitution
NGP15N41CL Datasheet (PDF)
ngd15n41cl ngb15n41cl ngp15n41cl.pdf
NGD15N41CL,NGB15N41CL,NGP15N41CLPreferred Device Ignition IGBT15 Amps, 410 Voltshttp://onsemi.comN-Channel DPAK, D2PAK and TO-22015 AMPSThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clamped410 VOLTSprotection for use in inductive coil drivers applications. Primary usesVCE(on) 3 2.1 V @include I
Datasheet: NGB8206N , NGB8207AN , NGB8207N , NGD15N41CL , NGD18N40CLB , NGD8201A , NGD8201N , NGD8205N , IRG7R313U , FID60-06D , FII24N17AH1 , FII30-06D , FII30-12E , FII40-06D , FII50-12E , IXA12IF1200HB , IXA12IF1200PB .
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