All IGBT. IXA45IF1200HB Datasheet

 

IXA45IF1200HB Datasheet and Replacement


   Type Designator: IXA45IF1200HB
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 325 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 78 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 40 nS
   Qg ⓘ - Total Gate Charge, typ: 106 nC
   Package: TO247
 

 IXA45IF1200HB substitution

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IXA45IF1200HB Datasheet (PDF)

 ..1. Size:126K  ixys
 ixa45if1200hb.pdf pdf_icon

IXA45IF1200HB

IXA45IF1200HBVCES = 1200VXPT IGBTI= 78 AC25VCE(sat) = 1.8VCopackPart numberIXA45IF1200HBBackside: collector2(C)(G) 13(E)Features / Advantages: Applications: Package: TO-247 Easy paralleling due to the positive temperature AC motor drives Industry standard outline coefficient of the on-state voltage Solar inverter RoHS compliant Rugged XPT de

 9.1. Size:174K  ixys
 mixa450pf1200tsf.pdf pdf_icon

IXA45IF1200HB

MIXA450PF1200TSFVCES = 2x 1200VXPT IGBT ModuleI= 650AC25VCE(sat) = 1.8VPhase leg + free wheeling Diodes + NTCPart numberMIXA450PF1200TSFBackside: isolated52 1 8 7 94310/116Features / Advantages: Applications: Package: SimBus F High level of integration - only one AC motor drives Isolation Voltage: V~3000 power semiconductor module required Pu

Datasheet: IXA20I1200PB , IXA20IF1200HB , IXA20PG1200DHGLB , IXA27IF1200HJ , IXA30PG1200DHGLB , IXA33IF1200HB , IXA37IF1200HJ , IXA40PG1200DHGLB , JT075N065WED , IXA55I1200HJ , IXA60IF1200NA , IXBF12N300 , IXBF20N300 , IXBF32N300 , IXBF40N160 , IXBF42N300 , IXBF55N300 .

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