All IGBT. IXBF40N160 Datasheet

 

IXBF40N160 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXBF40N160
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 28 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 6.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 60 nS
   Qgⓘ - Total Gate Charge, typ: 130 nC
   Package: ISOPLUS-I4-PAK

 IXBF40N160 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXBF40N160 Datasheet (PDF)

 ..1. Size:85K  ixys
 ixbf40n160.pdf

IXBF40N160 IXBF40N160

IXBF 40N160IC25 = 28 AHigh VoltageVCES = 1600 VBIMOSFETTMVCE(sat) = 6.2 Vin High Voltage ISOPLUS i4-PACTMtf = 40 nsMonolithic Bipolar MOS Transistor15Features IGBT High Voltage BIMOSFETTMSymbol Conditions Maximum Ratings - substitute for high voltage MOSFETs with significantly lower voltage dropVCES TVJ = 25C to 150C 1600 V- fast switching for high frequ

 9.1. Size:202K  ixys
 ixbf42n300.pdf

IXBF40N160 IXBF40N160

Preliminary Technical InformationHigh Voltage, BiMOSFETTMVCES = 3000VIXBF42N300Monolithic Bipolar MOSIC110 = 24ATransistorVCE(sat) 3.0V(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 25 V12VGEM Transient 35 V

Datasheet: IXA37IF1200HJ , IXA40PG1200DHGLB , IXA45IF1200HB , IXA55I1200HJ , IXA60IF1200NA , IXBF12N300 , IXBF20N300 , IXBF32N300 , TGPF30N43P , IXBF42N300 , IXBF55N300 , IXBF9N160G , IXBH10N170 , IXBH12N300 , IXBH16N170 , IXBH16N170A , IXBH20N300 .

 

 
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