IXBH5N160G Datasheet and Replacement
Type Designator: IXBH5N160G
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 68 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 5.7 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.9 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 200 nS
Qg ⓘ - Total Gate Charge, typ: 26 nC
Package: TO247
IXBH5N160G substitution
IXBH5N160G Datasheet (PDF)
ixbp5n160g ixbh5n160g.pdf
IXBP 5N160 GIC25 = 5.7 AHigh VoltageIXBH 5N160 GVCES = 1600 VBIMOSFETTMVCE(sat) = 4.9 Vtf = 70 nsMonolithic Bipolar MOS TransistorCTO-220 AB (IXBP)Preliminary data sheetGCC (TAB)EGTO-247 AD (IXBH)EGCC (TAB)EA = Anode, C = Cathode , TAB = Cathode IGBTFeaturesSymbol Conditions Maximum Ratings High Voltage BIMOSFETTM- substitute for high v
ixbh5n160g.pdf
IXBP 5N160 GIC25 = 5.7 AHigh VoltageIXBH 5N160 GVCES = 1600 VBIMOSFETTMVCE(sat) = 4.9 Vtf = 70 nsMonolithic Bipolar MOS TransistorCTO-220 AB (IXBP)Preliminary data sheetGCC (TAB)EGTO-247 AD (IXBH)EGCC (TAB)EA = Anode, C = Cathode , TAB = Cathode IGBTFeaturesSymbol Conditions Maximum Ratings High Voltage BIMOSFETTM- substitute for high v
Datasheet: IXBH20N300 , IXBH24N170 , IXBH28N170A , IXBH2N250 , IXBH32N300 , IXBH40N160 , IXBH42N170 , IXBH42N170A , SGT60U65FD1PT , IXBH6N170 , IXBH9N160G , IXBK55N300 , IXBK64N250 , IXBK75N170 , IXBK75N170A , IXBL64N250 , IXBN42N170A .
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