All IGBT. IXBH5N160G Datasheet

 

IXBH5N160G Datasheet and Replacement


   Type Designator: IXBH5N160G
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 68 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 5.7 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.9 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 200 nS
   Package: TO247
      - IGBT Cross-Reference

 

IXBH5N160G Datasheet (PDF)

 ..1. Size:24K  ixys
 ixbp5n160g ixbh5n160g.pdf pdf_icon

IXBH5N160G

IXBP 5N160 GIC25 = 5.7 AHigh VoltageIXBH 5N160 GVCES = 1600 VBIMOSFETTMVCE(sat) = 4.9 Vtf = 70 nsMonolithic Bipolar MOS TransistorCTO-220 AB (IXBP)Preliminary data sheetGCC (TAB)EGTO-247 AD (IXBH)EGCC (TAB)EA = Anode, C = Cathode , TAB = Cathode IGBTFeaturesSymbol Conditions Maximum Ratings High Voltage BIMOSFETTM- substitute for high v

 ..2. Size:28K  ixys
 ixbh5n160g.pdf pdf_icon

IXBH5N160G

IXBP 5N160 GIC25 = 5.7 AHigh VoltageIXBH 5N160 GVCES = 1600 VBIMOSFETTMVCE(sat) = 4.9 Vtf = 70 nsMonolithic Bipolar MOS TransistorCTO-220 AB (IXBP)Preliminary data sheetGCC (TAB)EGTO-247 AD (IXBH)EGCC (TAB)EA = Anode, C = Cathode , TAB = Cathode IGBTFeaturesSymbol Conditions Maximum Ratings High Voltage BIMOSFETTM- substitute for high v

Datasheet: IXBH20N300 , IXBH24N170 , IXBH28N170A , IXBH2N250 , IXBH32N300 , IXBH40N160 , IXBH42N170 , IXBH42N170A , IKW40T120 , IXBH6N170 , IXBH9N160G , IXBK55N300 , IXBK64N250 , IXBK75N170 , IXBK75N170A , IXBL64N250 , IXBN42N170A .

History: IXGT39N60BD1 | IGB30N60T | HGTP10N120BN | F3L75R07W2E3_B11 | CT20ASL-8 | STGB10M65DF2 | MMG75SR120UZA

Keywords - IXBH5N160G transistor datasheet

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 IXBH5N160G equivalent finder
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