All IGBT. IXBH9N160G Datasheet

 

IXBH9N160G IGBT. Datasheet pdf. Equivalent

Type Designator: IXBH9N160G

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 1600V

Collector-Emitter saturation Voltage |Vcesat|, V: 4.9V

Maximum Collector Current |Ic|, A: 9A

Rise Time, nS: 70

Package: TO247AD

IXBH9N160G Transistor Equivalent Substitute - IGBT Cross-Reference Search

IXBH9N160G PDF doc:

1.1. ixbh9n160g.pdf Size:76K _igbt

IXBH9N160G
IXBH9N160G

IXBH 9N160G High Voltage BIMOSFETTM IC25 = 9 A Monolithic Bipolar VCES = 1600 V MOS Transistor VCE(sat) = 4.9 V typ. tfi = 70 ns N-Channel, Enhancement Mode C TO-247 AD MOSFET compatible G G C C (TAB) E E G = Gate, C = Collector, E = Emitter, TAB = Collector Symbol Conditions Maximum Ratings Features • High Voltage BIMOSFETTM VCES TJ = 25°C to 150°C 1600 V - replaces hig

3.1. ixbh9n140-160.pdf Size:55K _ixys

IXBH9N160G
IXBH9N160G

High Voltage BIMOSFETTM IXBH 9N140 VCES = 1400/1600 V Monolithic Bipolar IXBH 9N160 IC25 = 9 A MOS Transistor VCE(sat) = 4.9 V typ. N-Channel, Enhancement Mode tfi = 40 ns C TO-247 AD G G C C (TAB) E E G = Gate, C = Collector, E = Emitter, TAB = Collector Symbol Conditions Maximum Ratings Features 9N140 9N160 • International standard package VCES TJ = 25°C to 150°C 1400 160

Datasheet: IXBH28N170A , IXBH2N250 , IXBH32N300 , IXBH40N160 , IXBH42N170 , IXBH42N170A , IXBH5N160G , IXBH6N170 , FGH40N60UFD , IXBK55N300 , IXBK64N250 , IXBK75N170 , IXBK75N170A , IXBL64N250 , IXBN42N170A , IXBN75N170 , IXBN75N170A .

 


IXBH9N160G
  IXBH9N160G
  IXBH9N160G
  IXBH9N160G
 
IXBH9N160G
  IXBH9N160G
  IXBH9N160G
  IXBH9N160G
 

social 

LIST

Last Update

IGBT: FF300R07ME4_B11 | FF300R07KE4 | FF300R06KE3_B2 | FF300R06KE3 | FF225R17ME4_B11 | FF225R17ME4 | FF225R17ME3 | FF225R12MS4 | FF225R12ME4_B11 | FF225R12ME4 |

Enter a full or partial SMD code with a minimum of 2 letters or numbers