All IGBT. IXBN42N170A Datasheet

 

IXBN42N170A Datasheet and Replacement


   Type Designator: IXBN42N170A
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 312 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 42 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.5 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 35 nS
   Coesⓘ - Output Capacitance, typ: 170 pF
   Package: SOT227B
 

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IXBN42N170A Datasheet (PDF)

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IXBN42N170A

Advance Technical InformationBIMOSFETTM MonolithicIXBN 42N170A VCES = 1700 VBipolar MOS TransistorIC25 = 42 AVCE(sat) = 6.0 Vtfi = 50 nsSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227 B (IXBN)E153432VCES TJ = 25C to 150C 1700 VEVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VVGEM Transient 30 VEIC25 TC = 25C42 ACIC90 TC =

Datasheet: IXBH5N160G , IXBH6N170 , IXBH9N160G , IXBK55N300 , IXBK64N250 , IXBK75N170 , IXBK75N170A , IXBL64N250 , IRG4PF50W , IXBN75N170 , IXBN75N170A , IXBP5N160G , IXBR42N170 , IXBT10N170 , IXBT12N300 , IXBT16N170 , IXBT16N170A .

History: APT36GA60S

Keywords - IXBN42N170A transistor datasheet

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