IXBN42N170A Specs and Replacement

Type Designator: IXBN42N170A

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 312 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 42 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.5 V @25℃

tr ⓘ - Rise Time, typ: 35 nS

Coesⓘ - Output Capacitance, typ: 170 pF

Package: SOT227B

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IXBN42N170A datasheet

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IXBN42N170A

Advance Technical Information BIMOSFETTM Monolithic IXBN 42N170A VCES = 1700 V Bipolar MOS Transistor IC25 = 42 A VCE(sat) = 6.0 V tfi = 50 ns Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXBN) E153432 VCES TJ = 25 C to 150 C 1700 V E VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V VGEM Transient 30 V E IC25 TC = 25 C42 A C IC90 TC =... See More ⇒

Specs: IXBH5N160G, IXBH6N170, IXBH9N160G, IXBK55N300, IXBK64N250, IXBK75N170, IXBK75N170A, IXBL64N250, GT30F125, IXBN75N170, IXBN75N170A, IXBP5N160G, IXBR42N170, IXBT10N170, IXBT12N300, IXBT16N170, IXBT16N170A

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