IXBN75N170A Specs and Replacement

Type Designator: IXBN75N170A

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 625 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.95 V @25℃

tr ⓘ - Rise Time, typ: 40 nS

Coesⓘ - Output Capacitance, typ: 450 pF

Package: SOT227B

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IXBN75N170A datasheet

 ..1. Size:187K  ixys
 ixbn75n170a.pdf pdf_icon

IXBN75N170A

Preliminary Technical Information BiMOSFETTM Monolithic VCES = 1700V IXBN75N170A Bipolar MOS Transistor IC90 = 42A VCE(sat) 6.00V tfi(typ) = 60ns SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 150 C 1700 V G VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V VGEM Transient 30 V E IC25 TC = 2... See More ⇒

 4.1. Size:173K  ixys
 ixbn75n170.pdf pdf_icon

IXBN75N170A

Preliminary Technical Information BiMOSFETTM Monolithic VCES = 1700V IXBN75N170 Bipolar MOS Transistor IC90 = 75A VCE(sat) 3.1V SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 150 C 1700 V G VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V VGEM Transient 30 V E IC25 TC = 25 C 145 A C IC90... See More ⇒

Specs: IXBH9N160G, IXBK55N300, IXBK64N250, IXBK75N170, IXBK75N170A, IXBL64N250, IXBN42N170A, IXBN75N170, BT60T60ANFK, IXBP5N160G, IXBR42N170, IXBT10N170, IXBT12N300, IXBT16N170, IXBT16N170A, IXBT20N300, IXBT24N170

Keywords - IXBN75N170A transistor spec

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