IXBR42N170 Specs and Replacement

Type Designator: IXBR42N170

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 200 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 57 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.9(max) V @25℃

tr ⓘ - Rise Time, typ: 139 nS

Coesⓘ - Output Capacitance, typ: 225 pF

Package: ISOPLUS247

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IXBR42N170 datasheet

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IXBR42N170

Preliminary Technical Information High Voltage, High Gain IXBR42N170 VCES = 1700V BIMOSFETTM Monolithic IC90 = 32A Bipolar MOS Transistor VCE(sat) 2.9V ISOPLUS247TM Symbol Test Conditions Maximum Ratings E153432 VCES TC = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V G VGEM Transient 30 V Isolated Tab C E ... See More ⇒

Specs: IXBK64N250, IXBK75N170, IXBK75N170A, IXBL64N250, IXBN42N170A, IXBN75N170, IXBN75N170A, IXBP5N160G, IRG4PF50W, IXBT10N170, IXBT12N300, IXBT16N170, IXBT16N170A, IXBT20N300, IXBT24N170, IXBT28N170A, IXBT2N250

Keywords - IXBR42N170 transistor spec

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