All IGBT. IXBR42N170 Datasheet

 

IXBR42N170 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXBR42N170
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 57 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.9(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 139 nS
   Coesⓘ - Output Capacitance, typ: 225 pF
   Qgⓘ - Total Gate Charge, typ: 188 nC
   Package: ISOPLUS247

 IXBR42N170 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXBR42N170 Datasheet (PDF)

 ..1. Size:168K  ixys
 ixbr42n170.pdf

IXBR42N170 IXBR42N170

Preliminary Technical InformationHigh Voltage, High Gain IXBR42N170 VCES = 1700VBIMOSFETTM MonolithicIC90 = 32ABipolar MOS TransistorVCE(sat) 2.9VISOPLUS247TMSymbol Test Conditions Maximum Ratings E153432VCES TC = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VVGES Continuous 20 VGVGEM Transient 30 VIsolated TabCE

Datasheet: IXBK64N250 , IXBK75N170 , IXBK75N170A , IXBL64N250 , IXBN42N170A , IXBN75N170 , IXBN75N170A , IXBP5N160G , IKW40N65WR5 , IXBT10N170 , IXBT12N300 , IXBT16N170 , IXBT16N170A , IXBT20N300 , IXBT24N170 , IXBT28N170A , IXBT2N250 .

 

 
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