CT20VS-8 Datasheet. Specs and Replacement

Type Designator: CT20VS-8  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 130(pulse) A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

Package: TO220S

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CT20VS-8 datasheet

 ..1. Size:29K  mitsubishi
 ct20vs-8.pdf pdf_icon

CT20VS-8

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20VS-8 STROBE FLASHER USE CT20VS-8 OUTLINE DRAWING Dimensions in mm r 10.5MAX. 4.5 1.3 +0.3 0 0 1 5 0.5 0.8 q w e wr q GATE q w COLLECTOR e EMITTER r COLLECTOR e VCES ............................................................................... 400V ICM ...................................................................... See More ⇒

 8.1. Size:26K  mitsubishi
 ct20vsl-8.pdf pdf_icon

CT20VS-8

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20VSL-8 STROBE FLASHER USE CT20VSL-8 OUTLINE DRAWING Dimensions in mm r 10.5MAX. 4.5 1.3 +0.3 0 0 1 5 0.5 0.8 q w e wr q GATE q w COLLECTOR e EMITTER r COLLECTOR e VCES ............................................................................... 400V ICM .................................................................... See More ⇒

Specs: CM75DY-28H, CT15SM-24, CT20AS-8, CT20ASJ-8, CT20ASL-8, CT20TM-8, CT20VM-8, CT20VML-8, SGT60N60FD1P7, CT20VSL-8, CT25AS-8, CT25ASJ-8, CT30SM-12, CT30TM-8, CT30VM-8, CT30VS-8, CT35SM-8

Keywords - CT20VS-8 transistor spec

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