IXBT16N170 Specs and Replacement

Type Designator: IXBT16N170

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 250 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3(max) V @25℃

tr ⓘ - Rise Time, typ: 101 nS

Coesⓘ - Output Capacitance, typ: 85 pF

Package: TO268

 IXBT16N170 Substitution

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IXBT16N170 datasheet

 ..1. Size:174K  ixys
 ixbt16n170.pdf pdf_icon

IXBT16N170

High Voltage, High Gain VCES = 1700V IXBH16N170 BIMOSFETTM Monolithic IXBT16N170 IC90 = 16A Bipolar MOS Transistor VCE(sat) 3.3V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V G VGES Continuous 20 V C (TAB) C E VGEM Transient 30 V IC25 TC = 25 C 40 A TO-268 (IXBT... See More ⇒

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IXBT16N170

Advanced Technical Information High Voltage, High Gain IXBH 16N170A VCES = 1700 V BIMOSFETTM Monolithic IXBT 16N170A IC25 = 16 A Bipolar MOS Transistor VCE(sat) = 6.0 V tfi(typ) = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1700 V G E VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C1... See More ⇒

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IXBT16N170

Advanced Technical Information High Voltage, High Gain IXBH 16N170A VCES = 1700 V BIMOSFETTM Monolithic IXBT 16N170A IC25 = 16 A Bipolar MOS Transistor VCE(sat) = 6.0 V tfi(typ) = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1700 V G E VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C1... See More ⇒

 0.3. Size:169K  ixys
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IXBT16N170

Advance Technical Information High Voltage, High Gain VCES = 1700V IXBA16N170AHV BIMOSFETTM Monolithic IXBT16N170AHV IC25 = 16A Bipolar MOS Transistor VCE(sat) 6.0V TO-263HV (IXBA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V TO-268HV (IXBT) VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V VGEM... See More ⇒

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Specs: IXBL64N250, IXBN42N170A, IXBN75N170, IXBN75N170A, IXBP5N160G, IXBR42N170, IXBT10N170, IXBT12N300, TGAN40N60FD, IXBT16N170A, IXBT20N300, IXBT24N170, IXBT28N170A, IXBT2N250, IXBT32N300, IXBT42N170, IXBT42N170A

Keywords - IXBT16N170 transistor spec

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