All IGBT. IXBT32N300 Datasheet

 

IXBT32N300 Datasheet and Replacement


   Type Designator: IXBT32N300
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 400 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 3000 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 185 nS
   Coesⓘ - Output Capacitance, typ: 124 pF
   Qg ⓘ - Total Gate Charge, typ: 142 nC
   Package: TO268
 

 IXBT32N300 substitution

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IXBT32N300 Datasheet (PDF)

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IXBT32N300

Preliminary Technical InformationHigh Voltage, High GainVCES = 3000VIXBH32N300BIMOSFETTM MonolithicIXBT32N300IC110 = 32ABipolar MOS TransistorVCE(sat) 3.2VTO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 VGC (TAB)VCGR TJ = 25C to 150C, RGE = 1M 3000 VCEVGES Continuous 20 VVGEM Transient 30 V

Datasheet: IXBT10N170 , IXBT12N300 , IXBT16N170 , IXBT16N170A , IXBT20N300 , IXBT24N170 , IXBT28N170A , IXBT2N250 , IRGP4063 , IXBT42N170 , IXBT42N170A , IXBT6N170 , IXBX25N250 , IXBX55N300 , IXBX64N250 , IXBX75N170 , IXBX75N170A .

History: CM200DU-24NFH | NCE07TD60B | STGF20H60DF | IGC82T170S8RM | DIM800FSS12-A | IGC10T65QE

Keywords - IXBT32N300 transistor datasheet

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