IXBT32N300 Specs and Replacement

Type Designator: IXBT32N300

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 400 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 3000 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃

tr ⓘ - Rise Time, typ: 185 nS

Coesⓘ - Output Capacitance, typ: 124 pF

Package: TO268

 IXBT32N300 Substitution

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IXBT32N300 datasheet

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IXBT32N300

Preliminary Technical Information High Voltage, High Gain VCES = 3000V IXBH32N300 BIMOSFETTM Monolithic IXBT32N300 IC110 = 32A Bipolar MOS Transistor VCE(sat) 3.2V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 3000 V G C (TAB) VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V C E VGES Continuous 20 V VGEM Transient 30 V... See More ⇒

Specs: IXBT10N170, IXBT12N300, IXBT16N170, IXBT16N170A, IXBT20N300, IXBT24N170, IXBT28N170A, IXBT2N250, GT30F132, IXBT42N170, IXBT42N170A, IXBT6N170, IXBX25N250, IXBX55N300, IXBX64N250, IXBX75N170, IXBX75N170A

Keywords - IXBT32N300 transistor spec

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