IXBX75N170 Specs and Replacement

Type Designator: IXBX75N170

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 1040 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 200 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.6 V @25℃

tr ⓘ - Rise Time, typ: 160 nS

Coesⓘ - Output Capacitance, typ: 400 pF

Package: PLUS247

 IXBX75N170 Substitution

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IXBX75N170 datasheet

 ..1. Size:179K  ixys
 ixbk75n170 ixbx75n170.pdf pdf_icon

IXBX75N170

Preliminary Technical Information BiMOSFETTM Monolithic VCES = 1700V IXBK75N170 Bipolar MOS Transistor IC110 = 75A IXBX75N170 VCE(sat) 3.1V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V G C VGES Continuous 20 V Tab E VGEM Transient 30 V IC25 TC = 25 C (Chip Capabilitt... See More ⇒

 ..2. Size:177K  ixys
 ixbx75n170.pdf pdf_icon

IXBX75N170

Preliminary Technical Information BiMOSFETTM Monolithic VCES = 1700V IXBK75N170 Bipolar MOS Transistor IC110 = 75A IXBX75N170 VCE(sat) 3.1V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V G C VGES Continuous 20 V Tab E VGEM Transient 30 V IC25 TC = 25 C (Chip Capabilitt... See More ⇒

 0.1. Size:192K  ixys
 ixbx75n170a.pdf pdf_icon

IXBX75N170

Advance Technical Information BiMOSFETTM Monolithic VCES = 1700V IXBK75N170A Bipolar MOS Transistor IC90 = 65A IXBX75N170A VCE(sat) 6.00V tfi(typ) = 60ns TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V G C VGES Continuous 20 V (TAB) E VGEM Transient 30 V IC25 TC = 25 C... See More ⇒

 0.2. Size:194K  ixys
 ixbk75n170a ixbx75n170a.pdf pdf_icon

IXBX75N170

Advance Technical Information BiMOSFETTM Monolithic VCES = 1700V IXBK75N170A Bipolar MOS Transistor IC90 = 65A IXBX75N170A VCE(sat) 6.00V tfi(typ) = 60ns TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V G C VGES Continuous 20 V (TAB) E VGEM Transient 30 V IC25 TC = 25 C... See More ⇒

SHOW MORE

Specs: IXBT2N250, IXBT32N300, IXBT42N170, IXBT42N170A, IXBT6N170, IXBX25N250, IXBX55N300, IXBX64N250, MBQ60T65PES, IXBX75N170A, IXDH35N60B, IXDH35N60BD1, IXDP20N60B, IXDP20N60BD1, IXDP35N60B, IXDR30N120, IXDR30N120D1

Keywords - IXBX75N170 transistor spec

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