All IGBT. IXBX75N170A Datasheet

 

IXBX75N170A IGBT. Datasheet pdf. Equivalent

Type Designator: IXBX75N170A

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 1700V

Collector-Emitter saturation Voltage |Vcesat|, V: 6V

Maximum Collector Current |Ic|, A: 110A

Package: PLUS247

IXBX75N170A Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXBX75N170A Datasheet (PDF)

1.1. ixbk75n170 ixbx75n170.pdf Size:179K _ixys

IXBX75N170A
IXBX75N170A

Preliminary Technical Information BiMOSFETTM Monolithic VCES = 1700V IXBK75N170 Bipolar MOS Transistor IC110 = 75A IXBX75N170 ? VCE(sat) ? ? 3.1V ? ? TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1700 V VCGR TJ = 25C to 150C, RGE = 1M? 1700 V G C VGES Continuous 20 V Tab E VGEM Transient 30 V IC25 TC = 25C (Chip Capabilitty) 200 A PLUS247TM (

1.2. ixbk75n170a ixbx75n170a.pdf Size:194K _ixys

IXBX75N170A
IXBX75N170A

Advance Technical Information BiMOSFETTM Monolithic VCES = 1700V IXBK75N170A Bipolar MOS Transistor IC90 = 65A IXBX75N170A ? VCE(sat) ? ? 6.00V ? ? tfi(typ) = 60ns TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1700 V VCGR TJ = 25C to 150C, RGE = 1M? 1700 V G C VGES Continuous 20 V (TAB) E VGEM Transient 30 V IC25 TC = 25C 110 A PLUS247TM (IX

1.3. ixbx75n170.pdf Size:177K _igbt

IXBX75N170A
IXBX75N170A

Preliminary Technical Information BiMOSFETTM Monolithic VCES = 1700V IXBK75N170 Bipolar MOS Transistor IC110 = 75A IXBX75N170 ≤ VCE(sat) ≤ ≤ 3.1V ≤ ≤ TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V G C VGES Continuous ±20 V Tab E VGEM Transient ±30 V IC25 TC = 25°C (Chip Capabilitt

1.4. ixbx75n170a.pdf Size:192K _igbt

IXBX75N170A
IXBX75N170A

Advance Technical Information BiMOSFETTM Monolithic VCES = 1700V IXBK75N170A Bipolar MOS Transistor IC90 = 65A IXBX75N170A ≤ VCE(sat) ≤ ≤ 6.00V ≤ ≤ tfi(typ) = 60ns TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V G C VGES Continuous ±20 V (TAB) E VGEM Transient ±30 V IC25 TC = 25°C

Datasheet: IXBT32N300 , IXBT42N170 , IXBT42N170A , IXBT6N170 , IXBX25N250 , IXBX55N300 , IXBX64N250 , IXBX75N170 , IRG7IC28U , IXDH35N60B , IXDH35N60BD1 , IXDP20N60B , IXDP20N60BD1 , IXDP35N60B , IXDR30N120 , IXDR30N120D1 , IXDR35N60BD1 .

 


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IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |