IXBX75N170A Datasheet and Replacement
Type Designator: IXBX75N170A
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 1040 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 110 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.95 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 40 nS
Coesⓘ - Output Capacitance, typ: 450 pF
Qgⓘ - Total Gate Charge, typ: 358 nC
Package: PLUS247
- IGBT Cross-Reference
IXBX75N170A Datasheet (PDF)
ixbx75n170a.pdf
Advance Technical InformationBiMOSFETTM Monolithic VCES = 1700VIXBK75N170ABipolar MOS Transistor IC90 = 65AIXBX75N170AVCE(sat) 6.00Vtfi(typ) = 60nsTO-264 (IXBK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VGCVGES Continuous 20 V (TAB)EVGEM Transient 30 VIC25 TC = 25C
ixbk75n170a ixbx75n170a.pdf
Advance Technical InformationBiMOSFETTM Monolithic VCES = 1700VIXBK75N170ABipolar MOS Transistor IC90 = 65AIXBX75N170AVCE(sat) 6.00Vtfi(typ) = 60nsTO-264 (IXBK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VGCVGES Continuous 20 V (TAB)EVGEM Transient 30 VIC25 TC = 25C
ixbk75n170 ixbx75n170.pdf
Preliminary Technical InformationBiMOSFETTM Monolithic VCES = 1700VIXBK75N170Bipolar MOS Transistor IC110 = 75AIXBX75N170VCE(sat) 3.1VTO-264 (IXBK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VGCVGES Continuous 20 V TabEVGEM Transient 30 VIC25 TC = 25C (Chip Capabilitt
ixbx75n170.pdf
Preliminary Technical InformationBiMOSFETTM Monolithic VCES = 1700VIXBK75N170Bipolar MOS Transistor IC110 = 75AIXBX75N170VCE(sat) 3.1VTO-264 (IXBK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VGCVGES Continuous 20 V TabEVGEM Transient 30 VIC25 TC = 25C (Chip Capabilitt
Datasheet: IXBT32N300 , IXBT42N170 , IXBT42N170A , IXBT6N170 , IXBX25N250 , IXBX55N300 , IXBX64N250 , IXBX75N170 , FGH40N60SFD , IXDH35N60B , IXDH35N60BD1 , IXDP20N60B , IXDP20N60BD1 , IXDP35N60B , IXDR30N120 , IXDR30N120D1 , IXDR35N60BD1 .
History: RGTH60TS65D
Keywords - IXBX75N170A transistor datasheet
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History: RGTH60TS65D
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