All IGBT. IXDH35N60BD1 Datasheet

 

IXDH35N60BD1 IGBT. Datasheet pdf. Equivalent

Type Designator: IXDH35N60BD1

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 250

Maximum Collector-Emitter Voltage |Vce|, V: 600

Maximum Gate-Emitter Voltage |Vge|, V: 20

Maximum Collector Current |Ic| @25℃, A: 60

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.2

Maximum G-E Threshold Voltag |VGE(th)|, V: 5

Maximum Junction Temperature (Tj), ℃: 150

Rise Time (tr), typ, nS: 45

Collector Capacity (Cc), typ, pF: 150

Total Gate Charge (Qg), typ, nC: 120

Package: TO247

IXDH35N60BD1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXDH35N60BD1 Datasheet (PDF)

 ..1. Size:325K  ixys
 ixdh35n60bd1.pdf

IXDH35N60BD1 IXDH35N60BD1

IXDP 35N60 B VCES = 600 VIGBTIXDH 35N60 B IC25 = 60 Awith optional DiodeIXDH 35N60 BD1 VCE(sat) typ = 2.1 VHigh Speed,Low Saturation VoltageC CTO-247 AD IXDH ...G GGE ECC (TAB)E IXDH 35N60 B IXDH 35N60 BD1 IXDP 35N60 BSymbol Conditions Maximum Ratings TO-220 AB IXDP ...VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 20 kW 600 VG CEVG

 4.1. Size:325K  ixys
 ixdh35n60b.pdf

IXDH35N60BD1 IXDH35N60BD1

IXDP 35N60 B VCES = 600 VIGBTIXDH 35N60 B IC25 = 60 Awith optional DiodeIXDH 35N60 BD1 VCE(sat) typ = 2.1 VHigh Speed,Low Saturation VoltageC CTO-247 AD IXDH ...G GGE ECC (TAB)E IXDH 35N60 B IXDH 35N60 BD1 IXDP 35N60 BSymbol Conditions Maximum Ratings TO-220 AB IXDP ...VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 20 kW 600 VG CEVG

 9.1. Size:54K  ixys
 ixdh30n120au1 ixdt30n120au1.pdf

IXDH35N60BD1 IXDH35N60BD1

High Voltage IGBTIXDH 30N120AU1 VCES = 1200 VIXDT 30N120AU1 IC25 = 50 Awith DiodeVCE(sat) typ = 2.5 VShort Circuit SOA CapabilityPreliminary DataSymbol Test Conditions Maximum Ratings TO-247 AD (IXDH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VC (TAB)GVGES Continuous 20 VCEVGEM Transient 30 VTO-268 AA (IXDT)IC25 TC = 25C5

 9.2. Size:83K  ixys
 ixdh30n120d1.pdf

IXDH35N60BD1 IXDH35N60BD1

IXDH 30N120IXDH 30N120 D1VCES = 1200 VHigh Voltage IGBTIC25 = 60 Awith optional DiodeVCE(sat) typ = 2.4 VShort Circuit SOA CapabilityC CSquare RBSOA TO-247 AD (IXDH)G GGCC (TAB)E EEIXDH 30N120 IXDH 30N120 D1 G = Gate, E = EmitterC = Collector , TAB = CollectorSymbol Conditions Maximum Ratings Features NPT IGBT technologyVCES TJ = 25C to 150C 1200 V

 9.3. Size:86K  ixys
 ixdh30n120 ixdt30n120 ixdh30n120d1 ixdt30n120d1.pdf

IXDH35N60BD1 IXDH35N60BD1

IXDH 30N120VCES = 1200 VHigh Voltage IGBTIXDH 30N120 D1IC25 = 60 Awith optional DiodeIXDT 30N120VCE(sat) typ = 2.4 VIXDT 30N120 D1Short Circuit SOA CapabilityC CSquare RBSOATO-247 AD (IXDH)G GE EGCC (TAB)IXDH 30N120 IXDH 30N120 D1EIXDT 30N120 IXDT 30N120 D1TO--268 AA (IXDT)Symbol Conditions Maximum RatingsGVCES TJ = 25C to 150C 1200 VEC (T

 9.4. Size:83K  ixys
 ixdh30n120.pdf

IXDH35N60BD1 IXDH35N60BD1

IXDH 30N120IXDH 30N120 D1VCES = 1200 VHigh Voltage IGBTIC25 = 60 Awith optional DiodeVCE(sat) typ = 2.4 VShort Circuit SOA CapabilityC CSquare RBSOA TO-247 AD (IXDH)G GGCC (TAB)E EEIXDH 30N120 IXDH 30N120 D1 G = Gate, E = EmitterC = Collector , TAB = CollectorSymbol Conditions Maximum Ratings Features NPT IGBT technologyVCES TJ = 25C to 150C 1200 V

Datasheet: IXBT42N170A , IXBT6N170 , IXBX25N250 , IXBX55N300 , IXBX64N250 , IXBX75N170 , IXBX75N170A , IXDH35N60B , GT50JR22 , IXDP20N60B , IXDP20N60BD1 , IXDP35N60B , IXDR30N120 , IXDR30N120D1 , IXDR35N60BD1 , IXEH25N120 , IXEH25N120D1 .

 

 
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