IXDH35N60BD1 PDF and Equivalents Search

 

IXDH35N60BD1 Specs and Replacement

Type Designator: IXDH35N60BD1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 250 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 45 nS

Coesⓘ - Output Capacitance, typ: 150 pF

Package: TO247

 IXDH35N60BD1 Substitution

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IXDH35N60BD1 datasheet

 ..1. Size:325K  ixys
 ixdh35n60bd1.pdf pdf_icon

IXDH35N60BD1

IXDP 35N60 B VCES = 600 V IGBT IXDH 35N60 B IC25 = 60 A with optional Diode IXDH 35N60 BD1 VCE(sat) typ = 2.1 V High Speed, Low Saturation Voltage C C TO-247 AD IXDH ... G G G E E C C (TAB) E IXDH 35N60 B IXDH 35N60 BD1 IXDP 35N60 B Symbol Conditions Maximum Ratings TO-220 AB IXDP ... VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 20 kW 600 V G C E VG... See More ⇒

 4.1. Size:325K  ixys
 ixdh35n60b.pdf pdf_icon

IXDH35N60BD1

IXDP 35N60 B VCES = 600 V IGBT IXDH 35N60 B IC25 = 60 A with optional Diode IXDH 35N60 BD1 VCE(sat) typ = 2.1 V High Speed, Low Saturation Voltage C C TO-247 AD IXDH ... G G G E E C C (TAB) E IXDH 35N60 B IXDH 35N60 BD1 IXDP 35N60 B Symbol Conditions Maximum Ratings TO-220 AB IXDP ... VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 20 kW 600 V G C E VG... See More ⇒

 9.1. Size:83K  ixys
 ixdh30n120.pdf pdf_icon

IXDH35N60BD1

IXDH 30N120 IXDH 30N120 D1 VCES = 1200 V High Voltage IGBT IC25 = 60 A with optional Diode VCE(sat) typ = 2.4 V Short Circuit SOA Capability C C Square RBSOA TO-247 AD (IXDH) G G G C C (TAB) E E E IXDH 30N120 IXDH 30N120 D1 G = Gate, E = Emitter C = Collector , TAB = Collector Symbol Conditions Maximum Ratings Features NPT IGBT technology VCES TJ = 25 C to 150 C 1200 V... See More ⇒

 9.2. Size:83K  ixys
 ixdh30n120d1.pdf pdf_icon

IXDH35N60BD1

IXDH 30N120 IXDH 30N120 D1 VCES = 1200 V High Voltage IGBT IC25 = 60 A with optional Diode VCE(sat) typ = 2.4 V Short Circuit SOA Capability C C Square RBSOA TO-247 AD (IXDH) G G G C C (TAB) E E E IXDH 30N120 IXDH 30N120 D1 G = Gate, E = Emitter C = Collector , TAB = Collector Symbol Conditions Maximum Ratings Features NPT IGBT technology VCES TJ = 25 C to 150 C 1200 V... See More ⇒

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Specs: IXBT42N170A , IXBT6N170 , IXBX25N250 , IXBX55N300 , IXBX64N250 , IXBX75N170 , IXBX75N170A , IXDH35N60B , FGH60N60SMD , IXDP20N60B , IXDP20N60BD1 , IXDP35N60B , IXDR30N120 , IXDR30N120D1 , IXDR35N60BD1 , IXEH25N120 , IXEH25N120D1 .

Keywords - IXDH35N60BD1 transistor spec

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