IXDP20N60B Specs and Replacement

Type Designator: IXDP20N60B

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 140 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 32 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 30 nS

Coesⓘ - Output Capacitance, typ: 85 pF

Package: TO220

 IXDP20N60B Substitution

- IGBTⓘ Cross-Reference Search

 

IXDP20N60B datasheet

 ..1. Size:277K  ixys
 ixdp20n60b.pdf pdf_icon

IXDP20N60B

IXDP 20N60 B VCES = 600 V High Voltage IGBT IXDP 20N60 BD1 IC25 = 32 A with optional Diode VCE(sat) typ = 2.2 V High Speed, Low Saturation Voltage C C TO-220 AB G G G C E C (TAB) E E G = Gate, E = Emitter IXDP 20N60B IXDP 20N60B D1 C = Collector , TAB = Collector Symbol Conditions Maximum Ratings Features NPT IGBT technology VCES TJ = 25 C to 150 C 600 V low switching l... See More ⇒

 0.1. Size:277K  ixys
 ixdp20n60bd1.pdf pdf_icon

IXDP20N60B

IXDP 20N60 B VCES = 600 V High Voltage IGBT IXDP 20N60 BD1 IC25 = 32 A with optional Diode VCE(sat) typ = 2.2 V High Speed, Low Saturation Voltage C C TO-220 AB G G G C E C (TAB) E E G = Gate, E = Emitter IXDP 20N60B IXDP 20N60B D1 C = Collector , TAB = Collector Symbol Conditions Maximum Ratings Features NPT IGBT technology VCES TJ = 25 C to 150 C 600 V low switching l... See More ⇒

Specs: IXBT6N170, IXBX25N250, IXBX55N300, IXBX64N250, IXBX75N170, IXBX75N170A, IXDH35N60B, IXDH35N60BD1, GT50JR22, IXDP20N60BD1, IXDP35N60B, IXDR30N120, IXDR30N120D1, IXDR35N60BD1, IXEH25N120, IXEH25N120D1, IXEH40N120

Keywords - IXDP20N60B transistor spec

 IXDP20N60B cross reference
 IXDP20N60B equivalent finder
 IXDP20N60B lookup
 IXDP20N60B substitution
 IXDP20N60B replacement