CT25AS-8 Specs and Replacement
Type Designator: CT25AS-8
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 150(pulse) A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
Package: MP3
CT25AS-8 Substitution
CT25AS-8 datasheet
ct25as-8.pdf
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT25AS-8 STROBE FLASHER USE CT25AS-8 OUTLINE DRAWING Dimensions in mm 6.5 0.5 0.1 5.0 0.2 4 1.0 0.9MAX. 0.5 0.2 2.3 2.3 0.8 1 2 3 wr q GATE q w COLLECTOR e EMITTER r COLLECTOR e VCES ................................................................................400V ICM ................................................. See More ⇒
Specs: CT20AS-8 , CT20ASJ-8 , CT20ASL-8 , CT20TM-8 , CT20VM-8 , CT20VML-8 , CT20VS-8 , CT20VSL-8 , IRGP4063D , CT25ASJ-8 , CT30SM-12 , CT30TM-8 , CT30VM-8 , CT30VS-8 , CT35SM-8 , CT40TMH-8 , CT60AM-18B .
History: BLQG3040-B
Keywords - CT25AS-8 transistor spec
CT25AS-8 cross reference
CT25AS-8 equivalent finder
CT25AS-8 lookup
CT25AS-8 substitution
CT25AS-8 replacement
History: BLQG3040-B
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
Popular searches
bd135 | d880 | 2n5457 equivalent | 2sc945 replacement | 9014 transistor | irfp260n datasheet | irfp250m | 2sk1058


