IXEH40N120D1 Specs and Replacement

Type Designator: IXEH40N120D1

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃

|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V

tr ⓘ - Rise Time, typ: 50 nS

Qg ⓘ - Total Gate Charge, typ: 150 nC

Package: TO247

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IXEH40N120D1 datasheet

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IXEH40N120D1

IXEH 40N120 IXEH 40N120D1 IC25 = 60 A NPT3 IGBT VCES = 1200 V VCE(sat) typ. = 2.4 V C C TO-247 AD G G G E E C C (TAB) E IXEH 40N120 IXEH 40N120D1 Features IGBT NPT3 IGBT Symbol Conditions Maximum Ratings - low saturation voltage - positive temperature coefficient for VCES TVJ = 25 C to 150 C 1200 V easy paralleling - fast switching VGES 20 V - short tail cur... See More ⇒

Specs: IXDP20N60BD1, IXDP35N60B, IXDR30N120, IXDR30N120D1, IXDR35N60BD1, IXEH25N120, IXEH25N120D1, IXEH40N120, SGT40N60NPFDPN, IXEL40N400, IXEN60N120, IXEN60N120D1, IXER20N120, IXER20N120D1, IXER35N120D1, IXER60N120, IXGA12N120A2

Keywords - IXEH40N120D1 transistor spec

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