All IGBT. IXEL40N400 Datasheet

 

IXEL40N400 Datasheet and Replacement


   Type Designator: IXEL40N400
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 380 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 40(90C) A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tj ⓘ - Maximum Junction Temperature: 125 ℃
   tr ⓘ - Rise Time, typ: 100 nS
   Coesⓘ - Output Capacitance, typ: 280 pF
   Qg ⓘ - Total Gate Charge, typ: 270 nC
   Package: ISOPLUS-I5-PAK
 

 IXEL40N400 substitution

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IXEL40N400 Datasheet (PDF)

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IXEL40N400

Preliminary Technical InformationVCES = 4000VVery High Voltage IXEL40N400IC90 = 40AIGBTVCE(sat) 3.5Vtfi(typ) = 425ns( Electrically Isolated Tab)ISOPLUS i5-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 125C 4000 VGVGES Continuous 20 VE Isolated TabCVGEM Transient 30 VIC90 TC = 90C 40 AG = Gate C = CollectorICM

Datasheet: IXDP35N60B , IXDR30N120 , IXDR30N120D1 , IXDR35N60BD1 , IXEH25N120 , IXEH25N120D1 , IXEH40N120 , IXEH40N120D1 , FGA25N120ANTD , IXEN60N120 , IXEN60N120D1 , IXER20N120 , IXER20N120D1 , IXER35N120D1 , IXER60N120 , IXGA12N120A2 , IXGA12N120A3 .

Keywords - IXEL40N400 transistor datasheet

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