IXEL40N400 Specs and Replacement

Type Designator: IXEL40N400

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 380 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 40(90C) A @25℃

Tj ⓘ - Maximum Junction Temperature: 125 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃

|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V

tr ⓘ - Rise Time, typ: 100 nS

Coesⓘ - Output Capacitance, typ: 280 pF

Qg ⓘ - Total Gate Charge, typ: 270 nC

Package: ISOPLUS-I5-PAK

 IXEL40N400 Substitution

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IXEL40N400 datasheet

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 ixel40n400.pdf pdf_icon

IXEL40N400

Preliminary Technical Information VCES = 4000V Very High Voltage IXEL40N400 IC90 = 40A IGBT VCE(sat) 3.5V tfi(typ) = 425ns ( Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 125 C 4000 V G VGES Continuous 20 V E Isolated Tab C VGEM Transient 30 V IC90 TC = 90 C 40 A G = Gate C = Collector ICM ... See More ⇒

Specs: IXDP35N60B, IXDR30N120, IXDR30N120D1, IXDR35N60BD1, IXEH25N120, IXEH25N120D1, IXEH40N120, IXEH40N120D1, RJP30E2DPP-M0, IXEN60N120, IXEN60N120D1, IXER20N120, IXER20N120D1, IXER35N120D1, IXER60N120, IXGA12N120A2, IXGA12N120A3

Keywords - IXEL40N400 transistor spec

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