All IGBT. IXEL40N400 Datasheet

 

IXEL40N400 Datasheet and Replacement


   Type Designator: IXEL40N400
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 380 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 40(90C) A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   Tjⓘ - Maximum Junction Temperature: 125 ℃
   trⓘ - Rise Time, typ: 100 nS
   Coesⓘ - Output Capacitance, typ: 280 pF
   Package: ISOPLUS-I5-PAK
      - IGBT Cross-Reference

 

IXEL40N400 Datasheet (PDF)

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IXEL40N400

Preliminary Technical InformationVCES = 4000VVery High Voltage IXEL40N400IC90 = 40AIGBTVCE(sat) 3.5Vtfi(typ) = 425ns( Electrically Isolated Tab)ISOPLUS i5-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 125C 4000 VGVGES Continuous 20 VE Isolated TabCVGEM Transient 30 VIC90 TC = 90C 40 AG = Gate C = CollectorICM

Datasheet: IXDP35N60B , IXDR30N120 , IXDR30N120D1 , IXDR35N60BD1 , IXEH25N120 , IXEH25N120D1 , IXEH40N120 , IXEH40N120D1 , BT40T60ANF , IXEN60N120 , IXEN60N120D1 , IXER20N120 , IXER20N120D1 , IXER35N120D1 , IXER60N120 , IXGA12N120A2 , IXGA12N120A3 .

History: DIM800DDM12-A | CM1400DU-24NF | TT050K065FQ | CRG15T120BK3SD | CM200DU-12NFH | FD600R06ME3_S2 | JNG75T65HYU2

Keywords - IXEL40N400 transistor datasheet

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 IXEL40N400 equivalent finder
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