All IGBT. IXEN60N120 Datasheet

 

IXEN60N120 Datasheet and Replacement


   Type Designator: IXEN60N120
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 445 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 50 nS
   Package: SOT227B
      - IGBT Cross-Reference

 

IXEN60N120 Datasheet (PDF)

 ..1. Size:199K  ixys
 ixen60n120 ixen60n120d1.pdf pdf_icon

IXEN60N120

IXEN 60N120IXEN 60N120D1IC25 = 100 ANPT3 IGBTVCES = 1200 Vin miniBLOC packageVCE(sat) typ. = 2.1 VC CminiBLOC, SOT-227 BE E153432GGGE EC = CollectorEG = Gate IXEN 60N120 IXEN 60N120D1CE = Emitter ** Either Emitter terminal can be used as Main or Kelvin EmitterFeatures IGBT NPT3 IGBTSymbol Conditions Maximum Ratings - low saturation voltage-

Datasheet: IXDR30N120 , IXDR30N120D1 , IXDR35N60BD1 , IXEH25N120 , IXEH25N120D1 , IXEH40N120 , IXEH40N120D1 , IXEL40N400 , FGA25N120ANTD , IXEN60N120D1 , IXER20N120 , IXER20N120D1 , IXER35N120D1 , IXER60N120 , IXGA12N120A2 , IXGA12N120A3 , IXGA12N60B .

History: MWI60-06G6K | FGW30N120H

Keywords - IXEN60N120 transistor datasheet

 IXEN60N120 cross reference
 IXEN60N120 equivalent finder
 IXEN60N120 lookup
 IXEN60N120 substitution
 IXEN60N120 replacement

 

 
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