All IGBT. IXEN60N120D1 Datasheet

 

IXEN60N120D1 Datasheet and Replacement


   Type Designator: IXEN60N120D1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 445 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 50 nS
   Qg ⓘ - Total Gate Charge, typ: 350 nC
   Package: SOT227B
 

 IXEN60N120D1 substitution

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IXEN60N120D1 Datasheet (PDF)

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IXEN60N120D1

IXEN 60N120IXEN 60N120D1IC25 = 100 ANPT3 IGBTVCES = 1200 Vin miniBLOC packageVCE(sat) typ. = 2.1 VC CminiBLOC, SOT-227 BE E153432GGGE EC = CollectorEG = Gate IXEN 60N120 IXEN 60N120D1CE = Emitter ** Either Emitter terminal can be used as Main or Kelvin EmitterFeatures IGBT NPT3 IGBTSymbol Conditions Maximum Ratings - low saturation voltage-

Datasheet: IXDR30N120D1 , IXDR35N60BD1 , IXEH25N120 , IXEH25N120D1 , IXEH40N120 , IXEH40N120D1 , IXEL40N400 , IXEN60N120 , BT40T60ANF , IXER20N120 , IXER20N120D1 , IXER35N120D1 , IXER60N120 , IXGA12N120A2 , IXGA12N120A3 , IXGA12N60B , IXGA14N120B .

History: IRGB4B60KD1PBF | SPT40N120F1A1 | SRE30N065FSUDG | MMG50H120X6TC | TGAN15N120FDR | IXXH75N60B3 | AP50G60W-HF

Keywords - IXEN60N120D1 transistor datasheet

 IXEN60N120D1 cross reference
 IXEN60N120D1 equivalent finder
 IXEN60N120D1 lookup
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