IXEN60N120D1 Specs and Replacement

Type Designator: IXEN60N120D1

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 445 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V

tr ⓘ - Rise Time, typ: 50 nS

Qg ⓘ - Total Gate Charge, typ: 350 nC

Package: SOT227B

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IXEN60N120D1 datasheet

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 ixen60n120 ixen60n120d1.pdf pdf_icon

IXEN60N120D1

IXEN 60N120 IXEN 60N120D1 IC25 = 100 A NPT3 IGBT VCES = 1200 V in miniBLOC package VCE(sat) typ. = 2.1 V C C miniBLOC, SOT-227 B E E153432 G G G E E C = Collector E G = Gate IXEN 60N120 IXEN 60N120D1 C E = Emitter * * Either Emitter terminal can be used as Main or Kelvin Emitter Features IGBT NPT3 IGBT Symbol Conditions Maximum Ratings - low saturation voltage -... See More ⇒

Specs: IXDR30N120D1, IXDR35N60BD1, IXEH25N120, IXEH25N120D1, IXEH40N120, IXEH40N120D1, IXEL40N400, IXEN60N120, RJP30H1DPD, IXER20N120, IXER20N120D1, IXER35N120D1, IXER60N120, IXGA12N120A2, IXGA12N120A3, IXGA12N60B, IXGA14N120B

Keywords - IXEN60N120D1 transistor spec

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