All IGBT. IXER35N120D1 Datasheet

 

IXER35N120D1 Datasheet and Replacement


   Type Designator: IXER35N120D1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 50 nS
   Qgⓘ - Total Gate Charge, typ: 150 nC
   Package: ISOPLUS247
      - IGBT Cross-Reference

 

IXER35N120D1 Datasheet (PDF)

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IXER35N120D1

IXER 35N120D1IC25 = 50ANPT3 IGBTVCES =1200Vwith DiodeVCE(sat) typ. = 2.2Vin ISOPLUS247TMCISOPLUS 247TM E153432GGCEIsolated BacksideEG = Gate C = Collector E = Emitter IGBT Features NPT3 IGBTSymbol Conditions Maximum Ratings- low saturation voltage- positive temperature coefficient forVCES TVJ = 25C to 150C 1200 V easy parallelingVGES 20

Datasheet: IXEH25N120D1 , IXEH40N120 , IXEH40N120D1 , IXEL40N400 , IXEN60N120 , IXEN60N120D1 , IXER20N120 , IXER20N120D1 , IRG7IC28U , IXER60N120 , IXGA12N120A2 , IXGA12N120A3 , IXGA12N60B , IXGA14N120B , IXGA15N120B2 , IXGA16N60B2 , IXGA16N60B2D1 .

History: IRG4PH50S-E | 1MBI1500UE-330-02

Keywords - IXER35N120D1 transistor datasheet

 IXER35N120D1 cross reference
 IXER35N120D1 equivalent finder
 IXER35N120D1 lookup
 IXER35N120D1 substitution
 IXER35N120D1 replacement

 

 
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