IXER35N120D1 Datasheet and Replacement
Type Designator: IXER35N120D1
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 50 nS
Package: ISOPLUS247
IXER35N120D1 substitution
IXER35N120D1 Datasheet (PDF)
ixer35n120d1.pdf
IXER 35N120D1IC25 = 50ANPT3 IGBTVCES =1200Vwith DiodeVCE(sat) typ. = 2.2Vin ISOPLUS247TMCISOPLUS 247TM E153432GGCEIsolated BacksideEG = Gate C = Collector E = Emitter IGBT Features NPT3 IGBTSymbol Conditions Maximum Ratings- low saturation voltage- positive temperature coefficient forVCES TVJ = 25C to 150C 1200 V easy parallelingVGES 20
Datasheet: IXEH25N120D1 , IXEH40N120 , IXEH40N120D1 , IXEL40N400 , IXEN60N120 , IXEN60N120D1 , IXER20N120 , IXER20N120D1 , GT30G124 , IXER60N120 , IXGA12N120A2 , IXGA12N120A3 , IXGA12N60B , IXGA14N120B , IXGA15N120B2 , IXGA16N60B2 , IXGA16N60B2D1 .
History: APT40GP90BG
Keywords - IXER35N120D1 transistor datasheet
IXER35N120D1 cross reference
IXER35N120D1 equivalent finder
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History: APT40GP90BG
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