IXER35N120D1 Specs and Replacement

Type Designator: IXER35N120D1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 200 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 50 nS

Package: ISOPLUS247

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IXER35N120D1 datasheet

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IXER35N120D1

IXER 35N120D1 IC25 = 50A NPT3 IGBT VCES =1200V with Diode VCE(sat) typ. = 2.2V in ISOPLUS247TM C ISOPLUS 247TM E153432 G G C E Isolated Backside E G = Gate C = Collector E = Emitter IGBT Features NPT3 IGBT Symbol Conditions Maximum Ratings - low saturation voltage - positive temperature coefficient for VCES TVJ = 25 C to 150 C 1200 V easy paralleling VGES 20... See More ⇒

Specs: IXEH25N120D1, IXEH40N120, IXEH40N120D1, IXEL40N400, IXEN60N120, IXEN60N120D1, IXER20N120, IXER20N120D1, SGT50T65FD1PN, IXER60N120, IXGA12N120A2, IXGA12N120A3, IXGA12N60B, IXGA14N120B, IXGA15N120B2, IXGA16N60B2, IXGA16N60B2D1

Keywords - IXER35N120D1 transistor spec

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