IXER60N120 Specs and Replacement

Type Designator: IXER60N120

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 375 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 95 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 50 nS

Package: ISOPLUS247

 IXER60N120 Substitution

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IXER60N120 datasheet

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 ixer60n120.pdf pdf_icon

IXER60N120

IXER 60N120 IC25 = 95 A NPT3 IGBT VCES = 1200 V in ISOPLUS 247TM VCE(sat) typ. = 2.1 V C ISOPLUS 247TM E153432 G G C E Isolated Backside E G = Gate C = Collector E = Emitter IGBT Features Symbol Conditions Maximum Ratings NPT3 IGBT - low saturation voltage VCES TVJ = 25 C to 150 C 1200 V - positive temperature coefficient for easy paralleling VGES 20 V - fast... See More ⇒

Specs: IXEH40N120, IXEH40N120D1, IXEL40N400, IXEN60N120, IXEN60N120D1, IXER20N120, IXER20N120D1, IXER35N120D1, GT30F126, IXGA12N120A2, IXGA12N120A3, IXGA12N60B, IXGA14N120B, IXGA15N120B2, IXGA16N60B2, IXGA16N60B2D1, IXGA16N60C2

Keywords - IXER60N120 transistor spec

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