All IGBT. IXER60N120 Datasheet

 

IXER60N120 Datasheet and Replacement


   Type Designator: IXER60N120
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 375 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 95 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 50 nS
   Qg ⓘ - Total Gate Charge, typ: 350 nC
   Package: ISOPLUS247
 

 IXER60N120 substitution

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IXER60N120 Datasheet (PDF)

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IXER60N120

IXER 60N120IC25 = 95 ANPT3 IGBTVCES = 1200 Vin ISOPLUS 247TMVCE(sat) typ. = 2.1 VCISOPLUS 247TM E153432GGCEIsolated BacksideEG = Gate C = Collector E = Emitter IGBT FeaturesSymbol Conditions Maximum Ratings NPT3 IGBT- low saturation voltageVCES TVJ = 25C to 150C 1200 V- positive temperature coefficient for easy parallelingVGES 20 V- fast

Datasheet: IXEH40N120 , IXEH40N120D1 , IXEL40N400 , IXEN60N120 , IXEN60N120D1 , IXER20N120 , IXER20N120D1 , IXER35N120D1 , RJP63F3DPP-M0 , IXGA12N120A2 , IXGA12N120A3 , IXGA12N60B , IXGA14N120B , IXGA15N120B2 , IXGA16N60B2 , IXGA16N60B2D1 , IXGA16N60C2 .

History: MIXA40W1200TED | IXGL200N60B3 | F3L200R12W2H3_B11 | SG50N06DS | NGTB40N120S | IXGN200N60B3 | TIG052TS

Keywords - IXER60N120 transistor datasheet

 IXER60N120 cross reference
 IXER60N120 equivalent finder
 IXER60N120 lookup
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