IXGA20N120 IGBT. Datasheet pdf. Equivalent

   Type Designator: IXGA20N120
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 20 nS
   Coesⓘ - Output Capacitance, typ: 90 pF
   Qgⓘ - Total Gate Charge, typ: 63 nC
   Package: TO263

IXGA20N120 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IXGA20N120 Datasheet (PDF)

..1. Size:69K ixys
ixga20n120.pdf

VCES = 1200 VIXGA 20N120IGBTIC25 = 40 AIXGP 20N120VCE(sat) = 2.5 Vtfi(typ) = 380 nsSymbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGCEVGEM Transient 30 VIC25 TC = 25C40 AIC90 TC = 90C20 ATO-263 AA (IXGA)ICM TC = 25C, 1 ms 80 ASSOA VGE = 15 V, T

..2. Size:71K ixys
ixga20n120 ixgp20n120.pdf

0.1. Size:234K ixys
ixga20n120a3.pdf

VCES = 1200VGenX3TM 1200V IGBTs IXGA20N120A3IC110 = 20AIXGP20N120A3VCE(sat) 2.5VIXGH20N120A3 Ultra-Low Vsat PT IGBTs forup to 3 kHz SwitchingTO-263 AA (IXGA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VVGEM Transient 30 VG

0.2. Size:210K ixys
ixga20n120b3.pdf

Preliminary Technical InformationVCES = 1200VGenX3TM 1200V IGBTIXGA20N120B3IC90 = 20AIXGP20N120B3VCE(sat) 3.1VHigh Speed Low Vsat PTIGBTs 3-20 kHz SwitchingTO-263 (IXGA)GSymbol Test Conditions Maximum RatingsEC (TAB)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VTO-220 (IXGP)VGES Continuous 20 VVGEM Trans

0.3. Size:236K ixys
ixga20n120a3 ixgh20n120a3 ixgp20n120a3.pdf