Справочник IGBT. IXGA20N120

 

IXGA20N120 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: IXGA20N120

Тип управляющего канала: N-Channel

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 1200V

Напряжение насыщения коллектор-эмиттер (Ucesat): 3V

Максимальный постоянный ток коллектора (Ic): 40A

Время нарастания: 280

Корпус: TO263(D2PAK)

Аналог (замена) для IXGA20N120

 

 

IXGA20N120 Datasheet (PDF)

1.1. ixga20n120b3 ixgp20n120b3.pdf Size:212K _ixys

IXGA20N120
IXGA20N120

Preliminary Technical Information VCES = 1200V GenX3TM 1200V IGBT IXGA20N120B3 IC90 = 20A IXGP20N120B3 ? VCE(sat) ? ? 3.1V ? ? High Speed Low Vsat PT IGBTs 3-20 kHz Switching TO-263 (IXGA) G Symbol Test Conditions Maximum Ratings E C (TAB) VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C, RGE = 1M? 1200 V TO-220 (IXGP) VGES Continuous 20 V VGEM Transient 30 V IC25 TC

1.2. ixga20n120a3 ixgh20n120a3 ixgp20n120a3.pdf Size:236K _ixys

IXGA20N120
IXGA20N120

VCES = 1200V GenX3TM 1200V IGBTs IXGA20N120A3 IC110 = 20A IXGP20N120A3 ? VCE(sat) ? ? 2.5V ? IXGH20N120A3 ? Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C, RGE = 1M? 1200 V VGES Continuous 20 V VGEM Transient 30 V G C C (Tab) E IC2

 1.3. ixga20n120 ixgp20n120.pdf Size:71K _ixys

IXGA20N120
IXGA20N120

VCES = 1200 V IXGA 20N120 IGBT IC25 = 40 A IXGP 20N120 VCE(sat) = 2.5 V tfi(typ) = 380 ns Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C; RGE = 1 M? 1200 V VGES Continuous 20 V G C E VGEM Transient 30 V IC25 TC = 25C40 A IC90 TC = 90C20 A TO-263 AA (IXGA) ICM TC = 25C, 1 ms 80 A SSOA VGE = 15 V, TVJ = 125C, RG

1.4. ixga20n120a3.pdf Size:234K _igbt

IXGA20N120
IXGA20N120

VCES = 1200V GenX3TM 1200V IGBTs IXGA20N120A3 IC110 = 20A IXGP20N120A3 ≤ VCE(sat) ≤ ≤ 2.5V ≤ IXGH20N120A3 ≤ Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V G

 1.5. ixga20n120.pdf Size:69K _igbt

IXGA20N120
IXGA20N120

VCES = 1200 V IXGA 20N120 IGBT IC25 = 40 A IXGP 20N120 VCE(sat) = 2.5 V tfi(typ) = 380 ns Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V G C E VGEM Transient ±30 V IC25 TC = 25°C40 A IC90 TC = 90°C20 A TO-263 AA (IXGA) ICM TC = 25°C, 1 ms 80 A SSOA VGE = 15 V, T

1.6. ixga20n120b3.pdf Size:210K _igbt

IXGA20N120
IXGA20N120

Preliminary Technical Information VCES = 1200V GenX3TM 1200V IGBT IXGA20N120B3 IC90 = 20A IXGP20N120B3 ≤ VCE(sat) ≤ ≤ 3.1V ≤ ≤ High Speed Low Vsat PT IGBTs 3-20 kHz Switching TO-263 (IXGA) G Symbol Test Conditions Maximum Ratings E C (TAB) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V TO-220 (IXGP) VGES Continuous ±20 V VGEM Trans

Другие IGBT... IXGA12N60B , IXGA14N120B , IXGA15N120B2 , IXGA16N60B2 , IXGA16N60B2D1 , IXGA16N60C2 , IXGA16N60C2D1 , IXGA20N100A3 , G30N60C3 , IXGA20N120A3 , IXGA20N120B3 , IXGA24N120C3 , IXGA24N60C , IXGA30N120B3 , IXGA30N60C3 , IXGA30N60C3C1 , IXGA30N60C3D4 .

 

 
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