IXGA30N60C3 Specs and Replacement

Type Designator: IXGA30N60C3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 220 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.6 V @25℃

tr ⓘ - Rise Time, typ: 26 nS

Coesⓘ - Output Capacitance, typ: 78 pF

Package: TO263

 IXGA30N60C3 Substitution

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IXGA30N60C3 datasheet

 ..1. Size:269K  ixys
 ixga30n60c3.pdf pdf_icon

IXGA30N60C3

GenX3TM 600V VCES = 600V IXGA30N60C3 IGBTs IC110 = 30A IXGP30N60C3 VCE(sat) 3.0V IXGH30N60C3 tfi(typ) = 47ns High-Speed PT IGBTs for 40-100kHz Switching TO-263 AA (IXGA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V TO-220AB (IXGP) VGES Continuous 20 V ... See More ⇒

 0.1. Size:287K  ixys
 ixga30n60c3d4.pdf pdf_icon

IXGA30N60C3

GenX3TM 600V IGBTs VCES = 600V IXGA30N60C3D4 w/ Diode IC110 = 30A IXGP30N60C3D4 VCE(sat) 3.0V tfi(typ) = 47ns High-Speed PT IGBTs for 40-100kHz Switching TO-263 AA (IXGA) Symbol Test Conditions Maximum Ratings G E VCES TC = 25 C to 150 C 600 V C (Tab) VCGR TJ = 25 C to 150 C, RGE = 1M 600 V TO-220AB (IXGP) VGES Continuous 20 V ... See More ⇒

 0.2. Size:278K  ixys
 ixga30n60c3c1.pdf pdf_icon

IXGA30N60C3

GenX3TM 600V IGBTs VCES = 600V IXGA30N60C3C1 w/ SiC Anti-Parallel IC110 = 30A IXGP30N60C3C1 Diode VCE(sat) 3.0V IXGH30N60C3C1 tfi(typ) = 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RG... See More ⇒

 7.1. Size:209K  ixys
 ixga30n120b3.pdf pdf_icon

IXGA30N60C3

VCES = 1200V GenX3TM 1200V IXGA30N120B3 IC110 = 30A IGBTs IXGP30N120B3 VCE(sat) 3.5V IXGH30N120B3 tfi(typ) = 204ns High-Speed Low-Vsat PT IGBTs 3-20 kHz Switching TO-263 (IXGA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V TO-220 (IXGP) VGES Continuous 20 V VGEM Tra... See More ⇒

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Specs: IXGA16N60C2D1, IXGA20N100A3, IXGA20N120, IXGA20N120A3, IXGA20N120B3, IXGA24N120C3, IXGA24N60C, IXGA30N120B3, YGW60N65F1A1, IXGA30N60C3C1, IXGA30N60C3D4, IXGA36N60A3, IXGA42N30C3, IXGA48N60A3, IXGA48N60B3, IXGA48N60C3, IXGA4N100

Keywords - IXGA30N60C3 transistor spec

 IXGA30N60C3 cross reference
 IXGA30N60C3 equivalent finder
 IXGA30N60C3 lookup
 IXGA30N60C3 substitution
 IXGA30N60C3 replacement