IXGF32N170 IGBT. Datasheet pdf. Equivalent
Type Designator: IXGF32N170
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 44 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 38 nS
Coesⓘ - Output Capacitance, typ: 167 pF
Qgⓘ - Total Gate Charge, typ: 146 nC
Package: ISOPLUS-I4-PAK
IXGF32N170 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IXGF32N170 Datasheet (PDF)
ixgf32n170.pdf
VCES = 1700VHigh Voltage IGBT IXGF32N170IC110 = 19AVCE(sat) 3.5V( Electrically Isolated Tab)tfi(typ) = 250nsISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1700 V12VGES Continuous 20 V5VGEM Transient 30 VISOLATED TABIC25 TC = 25C 44 AIC110 TC = 110C 19 AICM TC = 25C, 1ms 200 A1 = Gate 5 = Col
ixgf36n300.pdf
VCES = 3000VHigh Voltage IGBT IXGF36N300IC25 = 36AFor Capacitor DischargeApplicationsVCE(sat) 2.7V( Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 V12Isolated TabVGES Continuous 20 V5VGEM Transient 30 V1 = Gate 5 = CollectorIC25 TC = 25C 36 A2 = EmitterIC110 TC =
ixgf30n400.pdf
High Voltage IGBT VCES = 4000VIXGF30N400For Capacitor DischargeIC25 = 30AApplicationsVCE(sat) 3.1V( Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 4000 VVGES Continuous 20 V12Isolated TabVGEM Transient 30 V5IC25 TC = 25C 30 A1 = Gate 5 = CollectorIC110 TC = 110C 15 A
Datasheet: IXGB200N60B3 , IXGB75N60BD1 , IXGE200N60B , IXGF20N250 , IXGF20N300 , IXGF25N250 , IXGF25N300 , IXGF30N400 , CRG75T60AK3HD , IXGF36N300 , IXGH100N30B3 , IXGH100N30C3 , IXGH10N170 , IXGH10N170A , IXGH10N300 , IXGH120N30B3 , IXGH120N30C3 .
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