IXGH100N30C3 Specs and Replacement

Type Designator: IXGH100N30C3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 460 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 300 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.53 V @25℃

tr ⓘ - Rise Time, typ: 38 nS

Coesⓘ - Output Capacitance, typ: 435 pF

Package: TO247

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IXGH100N30C3 datasheet

 ..1. Size:101K  ixys
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IXGH100N30C3

Preliminary Technical Information IXGH100N30C3 VCES = 300V GenX3TM 300V IGBT IC110 = 100A VCE(sat) 1.85V High Speed PT IGBTs for tfi typ = 94ns 50-150kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 300 V VCGR TJ = 25 C to 150 C, RGE = 1M 300 V G VGES Continuous 20 V C (TAB) E VGEM Transient 30 V G... See More ⇒

 4.1. Size:155K  ixys
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IXGH100N30C3

Preliminary Technical Information TM VCES = 300V GenX3 300V IGBT IXGH100N30B3 IC110 = 100A VCE(sat) 1.7V Medium speed low Vsat PT tfi(typ) = 33ns IGBTs for 10-50 kHz switching Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 300 V VCGR TJ = 25 C to 150 C, RGE = 1M 300 V VGES Continuous 20 V VGEM Transient 30 V G TAB ... See More ⇒

 8.1. Size:224K  ixys
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IXGH100N30C3

Advance Technical Information High Voltage IGBT VCES = 3000V IXGH10N300 IC90 = 10A VCE(sat) 3.5V For Capacitor Discharge Applications TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V G (TAB) VGES Continuous 20 V C E VGEM Transient 30 V IC25 TC = 25 C 18 A G = Gate C ... See More ⇒

Specs: IXGF20N250, IXGF20N300, IXGF25N250, IXGF25N300, IXGF30N400, IXGF32N170, IXGF36N300, IXGH100N30B3, IKW40T120, IXGH10N170, IXGH10N170A, IXGH10N300, IXGH120N30B3, IXGH120N30C3, IXGH12N120A3, IXGH15N120B2D1, IXGH16N170

Keywords - IXGH100N30C3 transistor spec

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