All IGBT. 1MB10-120 Datasheet

 

1MB10-120 Datasheet and Replacement


   Type Designator: 1MB10-120
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 135 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 16 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.5 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 600 nS
   Coesⓘ - Output Capacitance, typ: 250 pF
   Package: TO3P
 

 1MB10-120 substitution

   - IGBT ⓘ Cross-Reference Search

 

1MB10-120 Datasheet (PDF)

 ..1. Size:187K  fuji
 1mb10-120.pdf pdf_icon

1MB10-120

Fuji Discrete Package IGBT n Outline Drawingnn Featuresn Square RBSOA Low Saturation Voltage Less Total Power Dissipation Minimized Internal Stray Inductancen Applicationsn High Power Switching A.C. Motor Controls D.C. Motor Controls Uninterruptible Power Supplyn Maximum Ratings and Characteristics n Equivalent Circuitn n Absolute Maxim

 9.1. Size:216K  fuji
 1mb10d-120.pdf pdf_icon

1MB10-120

Fuji Discrete Package IGBT n Outline Drawingnn Featuresn Square RBSOA Low Saturation Voltage Less Total Power Dissipation Minimized Internal Stray Inductancen Applicationsn High Power Switching A.C. Motor Controls D.C. Motor Controls Uninterruptible Power Supplyn Maximum Ratings and Characteristics n Equivalent Circuitn n Absolute Maxim

Datasheet: TGPF15N60FDR , TGPF20N60FDR , TGH80N65F2D2 , 1MB03D-120 , 1MB05-120 , 1MB05D-120 , 1MB08-120 , 1MB08D-120 , RJP30E2DPP-M0 , 1MB10D-120 , 1MB15D-060 , 1MB20-060 , 1MB20D-060 , 1MB30-060 , 1MBC03-120 , 1MBC05-060 , 1MBC05D-060 .

History: HCKZ75N65BH2

Keywords - 1MB10-120 transistor datasheet

 1MB10-120 cross reference
 1MB10-120 equivalent finder
 1MB10-120 lookup
 1MB10-120 substitution
 1MB10-120 replacement

 

 
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