IXGH30N60B2 Specs and Replacement

Type Designator: IXGH30N60B2

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 190 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 70 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8(max) V @25℃

tr ⓘ - Rise Time, typ: 15 nS

Coesⓘ - Output Capacitance, typ: 115 pF

Package: TO247

 IXGH30N60B2 Substitution

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IXGH30N60B2 datasheet

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IXGH30N60B2

Advance Technical Data VCES = 600 V IXGH 30N60B2 HiPerFASTTM IGBT IC25 = 70 A IXGT 30N60B2 VCE(sat) ... See More ⇒

 ..2. Size:578K  ixys
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IXGH30N60B2

Advance Technical Data VCES = 600 V IXGH 30N60B2 HiPerFASTTM IGBT IC25 = 70 A IXGT 30N60B2 VCE(sat) ... See More ⇒

 0.1. Size:506K  ixys
 ixgh30n60b2d1.pdf pdf_icon

IXGH30N60B2

Advance Technical Data VCES = 600 V HiPerFASTTM IGBT IXGH 30N60B2D1 IC25 = 70 A IXGT 30N60B2D1 VCE(sat) ... See More ⇒

 0.2. Size:600K  ixys
 ixgh30n60b2d1 ixgt30n60b2d1.pdf pdf_icon

IXGH30N60B2

Advance Technical Data VCES = 600 V HiPerFASTTM IGBT IXGH 30N60B2D1 IC25 = 70 A IXGT 30N60B2D1 VCE(sat) ... See More ⇒

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Specs: IXGH28N120BD1, IXGH28N140B3H1, IXGH28N60B3D1, IXGH28N60BD1, IXGH2N250, IXGH30N120B3, IXGH30N120B3D1, IXGH30N120C3H1, RJP63K2DPP-M0, IXGH30N60B2D1, IXGH30N60B4, IXGH30N60C2, IXGH30N60C2D1, IXGH30N60C3, IXGH30N60C3C1, IXGH30N60C3D1, IXGH32N100A3

Keywords - IXGH30N60B2 transistor spec

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