All IGBT. IXGH30N60B2D1 Datasheet

 

IXGH30N60B2D1 Datasheet and Replacement


   Type Designator: IXGH30N60B2D1
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 190 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 70 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8(max) V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 15 nS
   Coesⓘ - Output Capacitance, typ: 145 pF
   Package: TO247
 

 IXGH30N60B2D1 substitution

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IXGH30N60B2D1 Datasheet (PDF)

 ..1. Size:506K  ixys
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IXGH30N60B2D1

Advance Technical DataVCES = 600 VHiPerFASTTM IGBT IXGH 30N60B2D1IC25 = 70 AIXGT 30N60B2D1VCE(sat)

 ..2. Size:600K  ixys
 ixgh30n60b2d1 ixgt30n60b2d1.pdf pdf_icon

IXGH30N60B2D1

Advance Technical DataVCES = 600 VHiPerFASTTM IGBT IXGH 30N60B2D1IC25 = 70 AIXGT 30N60B2D1VCE(sat)

 3.1. Size:576K  ixys
 ixgh30n60b2.pdf pdf_icon

IXGH30N60B2D1

Advance Technical DataVCES = 600 VIXGH 30N60B2HiPerFASTTM IGBTIC25 = 70 AIXGT 30N60B2VCE(sat)

 3.2. Size:578K  ixys
 ixgh30n60b2 ixgt30n60b2.pdf pdf_icon

IXGH30N60B2D1

Advance Technical DataVCES = 600 VIXGH 30N60B2HiPerFASTTM IGBTIC25 = 70 AIXGT 30N60B2VCE(sat)

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Datasheet: IXGH28N140B3H1 , IXGH28N60B3D1 , IXGH28N60BD1 , IXGH2N250 , IXGH30N120B3 , IXGH30N120B3D1 , IXGH30N120C3H1 , IXGH30N60B2 , FGH40N60UFD , IXGH30N60B4 , IXGH30N60C2 , IXGH30N60C2D1 , IXGH30N60C3 , IXGH30N60C3C1 , IXGH30N60C3D1 , IXGH32N100A3 , IXGH32N120A3 .

History: NGTB30N120IHS | IXGT31N60D1 | T2250AB25E | VS-GB75LP120N | IXSH16N60U1 | IXYH100N65C3 | JNG75T65HXU1

Keywords - IXGH30N60B2D1 transistor datasheet

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