IXGH32N100A3 Spec and Replacement, IGBT Equivalent Finder, Cross Reference

IXGH32N100A3 Specs and Replacement

   Type Designator: IXGH32N100A3
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings

   Pc ⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 75 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   tr ⓘ - Rise Time, typ: 51 nS
   Coesⓘ - Output Capacitance, typ: 130 pF
   Package: TO247

IXGH32N100A3 Substitution

- IGBT ⓘ Cross-Reference Search

IXGH32N100A3 datasheet

..1. Size:120K ixys
ixgh32n100a3.pdf pdf_icon

Advance Technical Information IXGH32N100A3 VCES = 1000V GenX3TM 1000V IGBT IXGT32N100A3 IC25 = 75A VCE(sat) 2.2V Ultra-low Vsat PT IGBTs for up to 4 kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1000 V G C (TAB) VCGR TJ = 25 C to 150 C, RGE = 1M 1000 V C E VGES Continuous 20 V TO-268 ( ... See More ⇒

6.1. Size:572K ixys
ixgh32n170a ixgt32n170a.pdf pdf_icon

IXGH 32N170A VCES = 1700 V High Voltage IXGT 32N170A IC25 = 32 A IGBT VCE(sat) = 5.0 V tfi(typ) = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C32 A TO-247 AD (IXGH) IC90 TC = 90 C21 A ICM TC = 25 C, 1 ms 110 A ... See More ⇒

6.2. Size:573K ixys
ixgh32n170.pdf pdf_icon

High Voltage IXGH 32N170 VCES = 1700 V IXGT 32N170 IC25 = 75 A IGBT VCE(sat) = 3.3 V tfi(typ) = 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C75 A TO-247 AD (IXGH) IC90 TC = 90 C32 A ICM TC ... See More ⇒

6.3. Size:194K ixys
ixgh32n120a3.pdf pdf_icon

GenX3TM 1200V VCES = 1200V IXGH32N120A3 IGBTs IC110 = 32A IXGT32N120A3 VCE(sat) 2.35V Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 1200 V E VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V C (Tab) VGES Continuous 20 V TO-247 (IXGH) VGEM Transient 30 V IC25 TC = 25 C 75... See More ⇒