IXGH32N100A3 - параметры транзистора, его аналоги, Даташиты

IXGH32N100A3 Datasheet (PDF)

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Advance Technical Information IXGH32N100A3 VCES = 1000V GenX3TM 1000V IGBT IXGT32N100A3 IC25 = 75A VCE(sat) 2.2V Ultra-low Vsat PT IGBTs for up to 4 kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25C to 150C 1000 V G C (TAB) VCGR TJ = 25C to 150C, RGE = 1M 1000 V C E VGES Continuous 20 V TO-268 (

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IXGH 32N170AVCES = 1700 VHigh VoltageIXGT 32N170AIC25 = 32 AIGBTVCE(sat) = 5.0 Vtfi(typ) = 50 nsSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C32 ATO-247 AD (IXGH)IC90 TC = 90C21 AICM TC = 25C, 1 ms 110 A

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High Voltage IXGH 32N170 VCES = 1700 VIXGT 32N170 IC25 = 75 AIGBTVCE(sat) = 3.3 Vtfi(typ) = 250 nsPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C75 ATO-247 AD (IXGH)IC90 TC = 90C32 AICM TC

6.3. Size:194K ixys
ixgh32n120a3.pdf pdf_icon

GenX3TM 1200V VCES = 1200VIXGH32N120A3IGBTs IC110 = 32AIXGT32N120A3VCE(sat) 2.35VUltra-Low Vsat PT IGBTs forup to 3 kHz SwitchingTO-268 (IXGT)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 1200 VEVCGR TJ = 25C to 150C, RGE = 1M 1200 VC (Tab)VGES Continuous 20 VTO-247 (IXGH)VGEM Transient 30 VIC25 TC = 25C 75