IXGH32N170A Specs and Replacement
Type Designator: IXGH32N170A
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 350 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 32 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4 V @25℃
tr ⓘ - Rise Time, typ: 57 nS
Coesⓘ - Output Capacitance, typ: 180 pF
Package: TO247
IXGH32N170A Substitution - IGBTⓘ Cross-Reference Search
IXGH32N170A datasheet
ixgh32n170a ixgt32n170a.pdf
IXGH 32N170A VCES = 1700 V High Voltage IXGT 32N170A IC25 = 32 A IGBT VCE(sat) = 5.0 V tfi(typ) = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C32 A TO-247 AD (IXGH) IC90 TC = 90 C21 A ICM TC = 25 C, 1 ms 110 A ... See More ⇒
ixgh32n170a.pdf
IXGH 32N170A VCES = 1700 V High Voltage IXGT 32N170A IC25 = 32 A IGBT VCE(sat) = 5.0 V tfi(typ) = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C32 A TO-247 AD (IXGH) IC90 TC = 90 C21 A ICM TC = 25 C, 1 ms 110 A ... See More ⇒
ixgh32n170.pdf
High Voltage IXGH 32N170 VCES = 1700 V IXGT 32N170 IC25 = 75 A IGBT VCE(sat) = 3.3 V tfi(typ) = 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C75 A TO-247 AD (IXGH) IC90 TC = 90 C32 A ICM TC ... See More ⇒
ixgh32n170 ixgt32n170.pdf
High Voltage IXGH 32N170 VCES = 1700 V IXGT 32N170 IC25 = 75 A IGBT VCE(sat) = 3.3 V tfi(typ) = 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C75 A TO-247 AD (IXGH) IC90 TC = 90 C32 A ICM TC ... See More ⇒
Specs: IXGH30N60C2, IXGH30N60C2D1, IXGH30N60C3, IXGH30N60C3C1, IXGH30N60C3D1, IXGH32N100A3, IXGH32N120A3, IXGH32N170, RJP30H2A, IXGH32N90B2, IXGH32N90B2D1, IXGH34N60B2, IXGH35N120B, IXGH35N120C, IXGH36N60A3, IXGH36N60A3D4, IXGH36N60B3
Keywords - IXGH32N170A transistor spec
IXGH32N170A cross reference
IXGH32N170A equivalent finder
IXGH32N170A lookup
IXGH32N170A substitution
IXGH32N170A replacement
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