IXGH36N60A3 Specs and Replacement

Type Designator: IXGH36N60A3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 220 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4(max) V @25℃

tr ⓘ - Rise Time, typ: 23 nS

Coesⓘ - Output Capacitance, typ: 115 pF

Package: TO247

 IXGH36N60A3 Substitution

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IXGH36N60A3 datasheet

 ..1. Size:220K  ixys
 ixgh36n60a3.pdf pdf_icon

IXGH36N60A3

Preliminary Technical Information IXGA36N60A3 VCES = 600V GenX3TM 600V IGBT IXGP36N60A3 IC110 = 36A IXGH36N60A3 VCE(sat) 1.4V Ultra Low Vsat PT IGBT for up to 5kHz switching TO-263 (IXGA) G Symbol Test Conditions Maximum Ratings E (TAB) VCES TC = 25 C to 150 C 600 V TO-220 (IXGP) VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGE... See More ⇒

 0.1. Size:196K  ixys
 ixgh36n60a3d4.pdf pdf_icon

IXGH36N60A3

Preliminary Technical Information VCES = 600V GenX3TM 600V IGBT IXGH36N60A3D4 with Diode IC110 = 36A VCE(sat) 1.4V Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G VGEM Transient 30 V C (TAB) E IC1... See More ⇒

 5.1. Size:200K  ixys
 ixgh36n60b3d4.pdf pdf_icon

IXGH36N60A3

VCES = 600V GenX3TM 600V IGBT IXGH36N60B3D4 IC110 = 36A VCE(sat) 1.8V Medium speed low Vsat PT IGBT for 5-40kHz switching TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G TAB C VGEM Transient 30 V E IC110 TC = 110 C 36 A IF110 TC = 110 C 10 A ... See More ⇒

 5.2. Size:160K  ixys
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IXGH36N60A3

Advance Technical Information GenX3TM 600V IGBT VCES = 600V IXGH36N60B3 IC110 = 36A VCE(sat) 1.8V Medium-Speed Low-Vsat PT IGBT for 5 - 40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C Tab E VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C 92 A ... See More ⇒

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Specs: IXGH32N120A3, IXGH32N170, IXGH32N170A, IXGH32N90B2, IXGH32N90B2D1, IXGH34N60B2, IXGH35N120B, IXGH35N120C, CRG60T60AN3H, IXGH36N60A3D4, IXGH36N60B3, IXGH36N60B3C1, IXGH36N60B3D1, IXGH36N60B3D4, IXGH40N120A2, IXGH40N120B2D1, IXGH40N120C3

Keywords - IXGH36N60A3 transistor spec

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