Справочник IGBT. IXGH36N60A3

 

IXGH36N60A3 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IXGH36N60A3
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 220 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 75 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.4(max) V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 23 nS
   Coesⓘ - Выходная емкость, типовая: 115 pF
   Тип корпуса: TO247

 Аналог (замена) для IXGH36N60A3

 

 

IXGH36N60A3 Datasheet (PDF)

 ..1. Size:220K  ixys
 ixgh36n60a3.pdf

IXGH36N60A3 IXGH36N60A3

Preliminary Technical InformationIXGA36N60A3 VCES = 600VGenX3TM 600V IGBTIXGP36N60A3IC110 = 36AIXGH36N60A3VCE(sat) 1.4VUltra Low Vsat PT IGBT forup to 5kHz switchingTO-263 (IXGA)GSymbol Test Conditions Maximum RatingsE (TAB)VCES TC = 25C to 150C 600 VTO-220 (IXGP)VCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGE

 0.1. Size:196K  ixys
 ixgh36n60a3d4.pdf

IXGH36N60A3 IXGH36N60A3

Preliminary Technical InformationVCES = 600VGenX3TM 600V IGBTIXGH36N60A3D4with Diode IC110 = 36AVCE(sat) 1.4VUltra Low Vsat PT IGBT forup to 5kHz switchingTO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGVGEM Transient 30 VC (TAB)EIC1

 5.1. Size:200K  ixys
 ixgh36n60b3d4.pdf

IXGH36N60A3 IXGH36N60A3

VCES = 600VGenX3TM 600V IGBTIXGH36N60B3D4IC110 = 36AVCE(sat) 1.8VMedium speed low Vsat PTIGBT for 5-40kHz switchingTO-247 AD (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 V GTABCVGEM Transient 30 VEIC110 TC = 110C 36 AIF110 TC = 110C 10 A

 5.2. Size:160K  ixys
 ixgh36n60b3.pdf

IXGH36N60A3 IXGH36N60A3

Advance Technical InformationGenX3TM 600V IGBT VCES = 600VIXGH36N60B3IC110 = 36A VCE(sat) 1.8V Medium-Speed Low-Vsat PT IGBTfor 5 - 40kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 VC TabEVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C 92 A

 5.3. Size:178K  ixys
 ixgh36n60b3c1.pdf

IXGH36N60A3 IXGH36N60A3

Preliminary Technical InformationGenX3TM 600V IGBT VCES = 600VIXGH36N60B3C1w/ SiC Anti-Parallel IC110 = 36ADiode VCE(sat) 1.8Vtfi(typ) = 100nsMedium Speed Low Vsat PTIGBT for 5 - 40kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VG (TAB)VCGR TJ = 25C to 150C, RGE = 1M 600 V CEVGES Continuous 20

 5.4. Size:173K  ixys
 ixgh36n60b3d1.pdf

IXGH36N60A3 IXGH36N60A3

GenX3TM 600V IGBT VCES = 600VIXGH36N60B3D1w/ Diode IC110 = 36A VCE(sat) 1.8V Medium-Speed Low-Vsat PT IGBTfor 5 - 40kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 VC (TAB)EVGES Continuous 20 VVGEM Transient 30 VIC110 TC = 110C 36 AG = Gate C = Col

Другие IGBT... IXGH32N120A3 , IXGH32N170 , IXGH32N170A , IXGH32N90B2 , IXGH32N90B2D1 , IXGH34N60B2 , IXGH35N120B , IXGH35N120C , BT40T60ANF , IXGH36N60A3D4 , IXGH36N60B3 , IXGH36N60B3C1 , IXGH36N60B3D1 , IXGH36N60B3D4 , IXGH40N120A2 , IXGH40N120B2D1 , IXGH40N120C3 .

 

 
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