IXGH40N60B2D1 Datasheet and Replacement
Type Designator: IXGH40N60B2D1
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 75 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7(max) V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 20 nS
Coesⓘ - Output Capacitance, typ: 210 pF
Package: TO247
- IGBT Cross-Reference
IXGH40N60B2D1 Datasheet (PDF)
ixgh40n60b2d1 ixgt40n60b2d1.pdf

VCES = 600 VHiPerFASTTM IGBT IXGH 40N60B2D1IC25 = 75 AIXGT 40N60B2D1VCE(sat)
ixgh40n60b2d1.pdf

VCES = 600 VHiPerFASTTM IGBT IXGH 40N60B2D1IC25 = 75 AIXGT 40N60B2D1VCE(sat)
ixgh40n60b2 ixgt40n60b2.pdf

Advance Technical DataVCES = 600 VIXGH 40N60B2HiPerFASTTM IGBTIC25 = 75 AIXGT 40N60B2VCE(sat)
ixgh40n60b2.pdf

Advance Technical DataVCES = 600 VIXGH 40N60B2HiPerFASTTM IGBTIC25 = 75 AIXGT 40N60B2VCE(sat)
Datasheet: IXGH36N60B3D1 , IXGH36N60B3D4 , IXGH40N120A2 , IXGH40N120B2D1 , IXGH40N120C3 , IXGH40N120C3D1 , IXGH40N60B , IXGH40N60B2 , GT30J127 , IXGH40N60C , IXGH40N60C2 , IXGH40N60C2D1 , IXGH42N30C3 , IXGH45N120 , IXGH48N60A3 , IXGH48N60A3D1 , IXGH48N60B3 .
History: DIM800XSM45-TS | MITB10WB1200TMH | APT45GP120B2DQ2G | ISL9V5036P3 | STGBL6NC60DI | MMIX4B22N300 | 7MBP100VDA060-50
Keywords - IXGH40N60B2D1 transistor datasheet
IXGH40N60B2D1 cross reference
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IXGH40N60B2D1 replacement
History: DIM800XSM45-TS | MITB10WB1200TMH | APT45GP120B2DQ2G | ISL9V5036P3 | STGBL6NC60DI | MMIX4B22N300 | 7MBP100VDA060-50



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