IXGH40N60B2D1 Specs and Replacement

Type Designator: IXGH40N60B2D1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7(max) V @25℃

tr ⓘ - Rise Time, typ: 20 nS

Coesⓘ - Output Capacitance, typ: 210 pF

Package: TO247

 IXGH40N60B2D1 Substitution

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IXGH40N60B2D1 datasheet

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 ixgh40n60b2d1 ixgt40n60b2d1.pdf pdf_icon

IXGH40N60B2D1

VCES = 600 V HiPerFASTTM IGBT IXGH 40N60B2D1 IC25 = 75 A IXGT 40N60B2D1 VCE(sat) ... See More ⇒

 ..2. Size:513K  ixys
 ixgh40n60b2d1.pdf pdf_icon

IXGH40N60B2D1

VCES = 600 V HiPerFASTTM IGBT IXGH 40N60B2D1 IC25 = 75 A IXGT 40N60B2D1 VCE(sat) ... See More ⇒

 3.1. Size:578K  ixys
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IXGH40N60B2D1

Advance Technical Data VCES = 600 V IXGH 40N60B2 HiPerFASTTM IGBT IC25 = 75 A IXGT 40N60B2 VCE(sat) ... See More ⇒

 3.2. Size:575K  ixys
 ixgh40n60b2.pdf pdf_icon

IXGH40N60B2D1

Advance Technical Data VCES = 600 V IXGH 40N60B2 HiPerFASTTM IGBT IC25 = 75 A IXGT 40N60B2 VCE(sat) ... See More ⇒

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Specs: IXGH36N60B3D1, IXGH36N60B3D4, IXGH40N120A2, IXGH40N120B2D1, IXGH40N120C3, IXGH40N120C3D1, IXGH40N60B, IXGH40N60B2, G50T65D, IXGH40N60C, IXGH40N60C2, IXGH40N60C2D1, IXGH42N30C3, IXGH45N120, IXGH48N60A3, IXGH48N60A3D1, IXGH48N60B3

Keywords - IXGH40N60B2D1 transistor spec

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