All IGBT. IXGH48N60B3D1 Datasheet

 

IXGH48N60B3D1 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXGH48N60B3D1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 25 nS
   Coesⓘ - Output Capacitance, typ: 190 pF
   Qgⓘ - Total Gate Charge, typ: 115 nC
   Package: TO247

 IXGH48N60B3D1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXGH48N60B3D1 Datasheet (PDF)

 ..1. Size:200K  ixys
 ixgh48n60b3d1.pdf

IXGH48N60B3D1 IXGH48N60B3D1

Preliminary Technical InformationVCES = 600VGenX3TM 600V IGBTIXGH48N60B3D1with Diode IC110 = 48AVCE(sat) 1.8VMedium speed low Vsat PTIGBTs 5-40 kHz switchingTO-247(IXGH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 V G ( TAB )CEI

 3.1. Size:221K  ixys
 ixgh48n60b3.pdf

IXGH48N60B3D1 IXGH48N60B3D1

IXGA48N60B3 VCES = 600VGenX3TM 600V IGBTIXGP48N60B3IC110 = 48AIXGH48N60B3VCE(sat) 1.8VMedium speed low Vsat PTIGBTs 5-40 kHz switchingTO-263 (IXGA)Symbol Test Conditions Maximum RatingsGEVCES TC = 25C to 150C 600 V (TAB)VCGR TJ = 25C to 150C, RGE = 1M 600 VTO-220 (IXGP)VGES Continuous 20 VVGEM Transient 30 VIC110 TC = 1

 3.2. Size:185K  ixys
 ixgh48n60b3c1.pdf

IXGH48N60B3D1 IXGH48N60B3D1

Preliminary Technical InformationGenX3TM 600V IGBT VCES = 600VIXGH48N60B3C1w/ SiC Anti-Parallel IC110 = 48ADiode VCE(sat) 1.8Vtfi(typ) = 116nsMedium Speed Low Vsat PTIGBT 5 - 40 kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 V ( TAB )CEVGES Continuous 20

 5.1. Size:223K  ixys
 ixga48n60c3-ixgh48n60c3-ixgp48n60c3.pdf

IXGH48N60B3D1 IXGH48N60B3D1

IXGA48N60C3 VCES = 600VGenX3TM 600V IGBTIXGH48N60C3IC110 = 48AIXGP48N60C3VCE(sat) 2.5VHigh Speed PT IGBTs fortfi(typ) = 38ns40-100kHz switchingTO-263 (IXGA)Symbol Test Conditions Maximum RatingsGVCES TC = 25C to 150C 600 VE (TAB)VCGR TJ = 25C to 150C, RGE = 1M 600 VTO-247 (IXGH)VGES Continuous 20 VVGEM Transient 30 VI

 5.2. Size:201K  ixys
 ixgh48n60a3d1.pdf

IXGH48N60B3D1 IXGH48N60B3D1

VCES = 600VGenX3TM 600V IGBTIXGH48N60A3D1w/Diode IC110 = 48AVCE(sat) 1.35VUltra Low Vsat PT IGBT forup to 5kHz switchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 600 VGC TabVCGR TJ = 25C to 150C, RGE = 1M 600 VEVGES Continuous 20 VVGEM Transient 30 V G = Gate C = CollectorE = Emitter Tab = Colle

 5.3. Size:201K  ixys
 ixgh48n60c3d1.pdf

IXGH48N60B3D1 IXGH48N60B3D1

VCES = 600VIXGH48N60C3D1GenX3TM 600V IGBTIC110 = 48Awith DiodeVCE(sat) 2.5Vtfi(typ) = 38nsHigh speed PT IGBT for40-100kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 VCEVGEM Transient 30 V ( TAB )IC25 TC = 25C (Limited by Leads)

 5.4. Size:240K  ixys
 ixgh48n60c3.pdf

IXGH48N60B3D1 IXGH48N60B3D1

GenX3TM 600V IGBTs IXGI48N60C3 VCES = 600V IXGA48N60C3IC110 = 48A IXGP48N60C3 2.5VHigh-Speed PT IGBTs for VCE(sat) 40-100kHz Switching IXGH48N60C3tfi(typ) = 38nsSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 V FeaturesVGES Continuous 20 V Optimized for Low Switching LossesVGEM Tra

 5.5. Size:234K  ixys
 ixgh48n60a3.pdf

IXGH48N60B3D1 IXGH48N60B3D1

IXGA48N60A3 VCES = 600VGenX3TM 600VIXGP48N60A3IGBTs IC110 = 48AIXGH48N60A3VCE(sat) 1.35VUltra Low Vsat PT IGBTs forTO-263 (IXGA)up to 5kHz switchingGESymbol Test Conditions Maximum RatingsC (Tab)VCES TJ = 25C to 150C 600 VTO-220 (IXGP)VCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGIC25 TC =

 5.6. Size:183K  ixys
 ixgh48n60c3c1.pdf

IXGH48N60B3D1 IXGH48N60B3D1

Preliminary Technical InformationGenX3TM 600V IGBT VCES = 600VIXGH48N60C3C1w/ SiC Anti-Parallel IC110 = 48ADiode VCE(sat) 2.5Vtfi(typ) = 38nsHigh Speed PT IGBT for40 - 100kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGCVGES Continuous 20 V E ( TAB )VGEM

Datasheet: IXGH40N60C2 , IXGH40N60C2D1 , IXGH42N30C3 , IXGH45N120 , IXGH48N60A3 , IXGH48N60A3D1 , IXGH48N60B3 , IXGH48N60B3C1 , IKW30N60H3 , IXGH48N60C3 , IXGH48N60C3C1 , IXGH48N60C3D1 , IXGH4N250C , IXGH50N120C3 , IXGH50N60B2 , IXGH50N60B4 , IXGH50N60B4D1 .

 

 
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